Datasheet > CEF06N5

CEF06N5

更新时间： 2022-01-18 18:38:00

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
5页	45K
描述
500V N Channel MOS

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CEF06N5 数据手册

CEF06N5

Oct. 2002

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES

Ω

500V , 4.5A , RDS(ON)=1 @VGS=10V.

Super high dense cell design for extremely low R^DS(ON)

High power and current handling capability.

TO-220F full-pak for through hole

TO-220F

ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)

Limit

Unit

Parameter

Symbol

Drain-Source Voltage

500

VGS

Gate-Source Voltage

4.5

13.5

4.5

Drain Current-Continuous

-Pulsed

Drain-Source Diode Forward Current

Maximum Power Dissipation

@Tc=25 C

Derate above 25 C

0.36

W/ C

Operating and Storage Temperautre Range

, TSTG

-65 to 150

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

C/W

įJC

2.8

RįJA

6-112

12 3 4 5

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