Datasheet > CEF02N6G

CEF02N6G

更新时间： 2024-02-23 22:55:03

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管
页数	文件大小	规格书
4页	394K
描述
N-Channel Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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CEF02N6G 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Is Samacsys：	N	Base Number Matches：	1

CEF02N6G 数据手册

CEP02N6G/CEB02N6G

CEF02N6G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

Type

V_DSS

600V

R_DS(ON)

5Ω

I_D

@V_GS

10V

CEP02N6G

CEB02N6G

CEF02N6G

2.2A

2.2A ^d

5Ω

10V

5Ω

10V

Super high dense cell design for extremely low R_DS(ON)

High power and current handing capability.

Lead free product is acquired.

CEB SERIES

CEP SERIES

TO-263(DD-PAK)

TO-220

CEF SERIES

TO-220F

ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted

Limit

Parameter

Symbol

Units

TO-220/263

TO-220F

Drain-Source Voltage

V_DS

V_GS

600

Gate-Source Voltage

±30

2.2 ^d

1.4^d

8.8 ^d

Drain Current-Continuous @ T_C= 25 C

@ T_C= 100 C

Drain Current-Pulsed ^a

2.2

1.4

8.8

I_D

I_DM

Maximum Power Dissipation @ T_C= 25 C

- Derate above 25 C

P_D

0.48

0.26

W/ C

Single Pulsed Avalanche Energy ^g

E_AS

I_AS

11.25

1.5

Single Pulsed Avalanche Current ^g

Operating and Store Temperature Range

T_J,T_stg

-55 to 150

Thermal Characteristics

Parameter

Symbol

RθJC

Limit

Units

C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

2.1

62.5

3.8

RθJA

Rev 5. 2011.Feb

Details are subject to change without notice .

http://www.cetsemi.com

12 3 4

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