Datasheet > CEB21A3

CEB21A3

更新时间： 2022-11-24 21:50:19

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	42K
描述
N-Channel Logic Level Enhancement Mode Field Effect Transistor

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数据手册

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CEB21A3 数据手册

CEP21A3/CEB21A3

Nov. 2002

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES

30V , 20A , RDS(ON)=45mΩ @VGS=10V.

DS(ON)=70m @VGS=4.5V.

Ω

Super high dense cell design for extremely low R^DS(ON)

High power and current handling capability.

TO-220 & TO-263 package.

CEB SERIES

TO-263(DD-PAK)

CEP SERIES

TO-220

ABSOLUTE MAXIMUM RATINGS (T =25 C unless otherwise noted)

Limit

Unit

Parameter

Symbol

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

-Pulsed

Drain-Source Diode Forward Current

Maximum Power Dissipation

@Tc=25 C

Derate above 25 C

0.29

W/ C

, TSTG

-65 to 175

Operating and Storage Temperature Range

THERMAL CHARACTERISTICS

C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

įJC

3.5

62.5

RįJA

4-167

12 3 4 5

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