Datasheet > CEB35P03

CEB35P03

更新时间： 2024-02-22 17:46:13

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	103K
描述
P-Channel Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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CEB35P03 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

CEB35P03 数据手册

CEP35P03/CEB35P03

P-Channel Enhancement Mode Field Effect Transistor

FEATURES

-30V, -35A, R_DS(ON)=36mΩ @V_GS= -10V.

R_DS(ON)=57mΩ @V_GS= -5V.

Super high dense cell design for extremely low R_DS(ON)

High power and current handing capability.

Lead free product is acquired.

TO-220 & TO-263 package.

CEB SERIES

TO-263(DD-PAK)

CEP SERIES

TO-220

ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted

Parameter

Symbol

V_DS

V_GS

I_D

Limit

Units

Drain-Source Voltage

-30

Gate-Source Voltage

±20

-35

Drain Current-Continuous

Drain Current-Pulsed ^a

I_DM

-140

Maximum Power Dissipation @ T_C= 25 C

- Derate above 25 C

P_D

0.48

W/ C

Operating and Store Temperature Range

TJ,Tstg

-55 to 175

Thermal Characteristics

Parameter

Symbol

RθJC

Limit

2.1

Units

C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

RθJA

62.5

Rev 2. 2005.May

http://www.cetsemi.com

12 3 4

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