Datasheet > CEB50N06

CEB50N06

更新时间： 2024-02-13 09:25:10

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管
页数	文件大小	规格书
4页	387K
描述
N-Channel Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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CEB50N06 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

CEB50N06 数据手册

CEP50N06/CEB50N06

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

60V, 50A ,R_DS(ON)= 17mΩ (typ) @V_GS= 10V.

Super high dense cell design for extremely low R_DS(ON)

High power and current handing capability.

Lead free product is acquired.

TO-220 & TO-263 package.

CEB SERIES

TO-263(DD-PAK)

CEP SERIES

TO-220

ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted

Parameter

Symbol

V_DS

V_GS

I_D

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

±20

Drain Current-Continuous

Drain Current-Pulsed ^a

I_DM

150

Maximum Power Dissipation @ T_C= 25 C

- Derate above 25 C

Single Pulsed Avalanche Energy ^d

Single Pulsed Avalanche Current ^d

Operating and Store Temperature Range

131

P_D

0.88

225

W/ C

E_AS

I_AS

T_J,T_stg

-55 to 175

Thermal Characteristics

Parameter

Symbol

RθJC

Limit

1.14

62.5

Units

W/ C

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

RθJA

Rev 2. 2007.March

http://www.cetsemi.com

Specification and data are subject to change without notice .

12 3 4

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