Datasheet > CEB06N5

CEB06N5

更新时间： 2022-11-24 21:54:39

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	43K
描述
N-Channel Logic Level Enhancement Mode Field Effect Transistor

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数据手册

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CEB06N5 数据手册

CEP06N5/CEB06N5

Oct. 2002

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES

500V , 6.6A , RDS(ON)=1

@VGS=10V.

Ω

Super high dense cell design for extremely low R^DS(ON)

High power and current handling capability.

TO-220 & TO-263 package.

CEB SERIES

TO-263(DD-PAK)

CEP SERIES

TO-220

ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)

Limit

Unit

Parameter

Symbol

Drain-Source Voltage

500

VGS

Gate-Source Voltage

6.6

Drain Current-Continuous

-Pulsed

Drain-Source Diode Forward Current

6.6

104

Maximum Power Dissipation

@Tc=25 C

Derate above 25 C

0.83

W/ C

Operating and Storage Temperautre Range

, TSTG

-55 to 150

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

C/W

įJC

1.2

62.5

RįJA

4-17

12 3 4 5

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