Datasheet > CEB10P10

CEB10P10

更新时间： 2022-10-21 00:50:22

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	397K
描述
P-Channel Enhancement Mode Field Effect Transistor

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CEB10P10 数据手册

CEP10P10/CEB10P10

P-Channel Enhancement Mode Field Effect Transistor

FEATURES

-100V, -9A, R_DS(ON)=350mΩ @V_GS= -10V.

Super high dense cell design for extremely low R_DS(ON)

High power and current handing capability.

Lead free product is acquired.

TO-220 & TO-263 package.

CEB SERIES

TO-263(DD-PAK)

CEP SERIES

TO-220

ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted

Parameter

Symbol

V_DS

V_GS

I_D

Limit

-100

±30

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

-9

Drain Current-Pulsed ^a

I_DM

-36

Maximum Power Dissipation @ T_C= 25 C

- Derate above 25 C

P_D

0.5

W/ C

Operating and Store Temperature Range

TJ,Tstg

-55 to 175

Thermal Characteristics

Parameter

Symbol

RθJC

Limit

Units

C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

RθJA

62.5

2009.July

http://www.cetsemi.com

12 3 4

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