Datasheet > CEB12N5

CEB12N5

更新时间： 2022-10-21 00:50:33

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管
页数	文件大小	规格书
4页	398K
描述
N-Channel Enhancement Mode Field Effect Transistor

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数据手册

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CEB12N5 数据手册

CEP12N5/CEB12N5

CEF12N5

PRELIMINARY

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

Type

V_DSS

500V

R_DS(ON)

0.54Ω

I_D

@V_GS

10V

CEP12N5

CEB12N5

CEF12N5

12A

12A ^d

10V

Super high dense cell design for extremely low R_DS(ON)

High power and current handing capability.

Lead free product is acquired.

CEB SERIES

CEP SERIES

TO-263(DD-PAK)

TO-220

CEF SERIES

TO-220F

ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted

Limit

Parameter

Symbol

Units

TO-220/263

TO-220F

Drain-Source Voltage

V_DS

V_GS

I_D

500

Gate-Source Voltage

±30

12 ^d

48^d

Drain Current-Continuous

Drain Current-Pulsed ^a

I_DM

Maximum Power Dissipation @ T_C= 25 C

- Derate above 25 C

166

1.3

P_D

0.4

W/ C

Operating and Store Temperature Range

T_J,T_stg

-55 to 150

Thermal Characteristics

Parameter

Symbol

RθJC

Limit

Units

C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

0.75

62.5

2.5

RθJA

This is preliminary information on a new product in development now .

Details are subject to change without notice .

Rev 1. 2008.Oct.

http://www.cetsemi.com

12 3 4

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