Datasheet > CEB12N5

CEB12N5

更新时间： 2022-10-21 00:50:33

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管
页数	文件大小	规格书
4页	398K
描述
N-Channel Enhancement Mode Field Effect Transistor

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CEB12N5 数据手册

CEP12N5/CEB12N5

CEF12N5

Electrical Characteristics T = 25 C unless otherwise noted

Parameter

Off Characteristics

Symbol

Test Condition

Min

Typ

Max

Units

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

On Characteristics ^b

BV_DSS

I_DSS

V_GS= 0V, I_D= 250µA

V_DS=500V, V_GS= 0V

V_GS= 30V, V_DS= 0V

V_GS= -30V, V_DS= 0V

500

µA

I_GSSF

IGSSR

100

-100

Gate Threshold Voltage

V_GS(th)

R_DS(on)

V_GS= V_DS, I_D= 250µA

V_GS= 10V, I_D= 6A

Static Drain-Source

0.45

0.54

Ω

On-Resistance

Dynamic Characteristics ^c

Input Capacitance

C_iss

C_oss

C_rss

1745

205

V_DS= 25V, V_GS= 0V,

f = 1.0 MHz

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics ^c

Turn-On Delay Time

Turn-On Rise Time

t_d(on)

t_r

t_d(off)

t_f

31.6

25.6

63.2

51.2

V_DD= 250V, I_D= 12A,

V_GS= 10V, R_GEN= 25Ω

Turn-Off Delay Time

Turn-Off Fall Time

146.3 292.6

Total Gate Charge

Q_g

44.1

7.3

58.7

V_DS= 400V,I_D= 12A,

V_GS= 10V

Gate-Source Charge

Gate-Drain Charge

Q_gs

Q_gd

17.3

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage ^b

I_S

V_SD

V_GS= 0V, I_S= 12A

1.4

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature .

b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .

c.Guaranteed by design, not subject to production testing.

d.Limited only by maximum temperature allowed .

e.Pulse width limited by safe operating area .

f.Full package I

=6A .

S(max)

g.Full package V test condition I =6A .

h.L = 15mH, I = 8.5A, V = 50V, R = 25Ω, Starting T = 25 C

123 4

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