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CDSQR4448 PDF预览

CDSQR4448

更新时间: 2024-11-16 06:47:19
品牌 Logo 应用领域
上华 - COMCHIP 整流二极管开关光电二极管
页数 文件大小 规格书
4页 192K
描述
SMD Switching Diode

CDSQR4448 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:R-PDSO-N2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:7.7Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-N2
JESD-609代码:e4元件数量:1
端子数量:2最高工作温度:125 °C
最大输出电流:0.125 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.125 W
最大重复峰值反向电压:100 V最大反向恢复时间:0.009 µs
表面贴装:YES端子面层:Gold (Au)
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

CDSQR4448 数据手册

 浏览型号CDSQR4448的Datasheet PDF文件第2页浏览型号CDSQR4448的Datasheet PDF文件第3页浏览型号CDSQR4448的Datasheet PDF文件第4页 
SMD Switching Diode  
SMD Diodes Specialist  
(RoHS Device)  
CDSQR4448  
High Speed  
Features  
Fast Switching Speed.  
0402(1005)  
0.041(1.05)  
0.037(0.95)  
Designed for mounting on small surface.  
Extremely thin/leadless package.  
0.026(0.65)  
0.022(0.55)  
Mechanical data  
Case: 0402(1005) standard package,  
molded plastic.  
0.022(0.55)  
0.018(0.45)  
Terminals: Gold plated, solderable per  
MIL-STD-750,method 2026.  
0.012(0.30) Typ.  
Marking Code: Cathode band & S5  
Mounting position: Any  
Weight: 0.001 gram(approx.).  
0.020(0.50) Typ.  
Dimensions in inches and (millimeter)  
O
Maximum Rating (at TA=25 C unless otherwise noted)  
Symbol  
Typ  
Max Unit  
Parameter  
Repetitive peak reverse voltage  
Conditions  
Min  
VRRM  
100  
V
Reverse voltage  
VR  
80  
V
Average forward current  
IO  
125  
mA  
2
1
TP = 1uS  
TP = 8.3mS  
Forward current,surge peak  
IFSM  
A
Power Dissipation  
Storage temperature  
Junction temperature  
PD  
TSTG  
Tj  
125  
mW  
O
-40  
+125  
+125  
C
O
C
O
Electrical Characteristics (at TA=25 C unless otherwise noted)  
Parameter  
Conditions  
Symbol Min Typ Max Unit  
IF = 5 mA  
IF= 100 mA  
0.72  
Forward voltage  
VF  
0.62  
V
1
VR = 20 V  
VR = 80 V  
25  
Reverse current  
IR  
nA  
PF  
nS  
100  
Capacitance between terminals f = 1 MHZ, and 0.5 VDC reverse voltage  
CT  
Trr  
9
9
Reverse recovery time  
IF = IR = 10mA,Irr=0.1 X IR,RL=100ohm  
REV:B  
Page 1  
QW-A0035  
Comchip Technology CO., LTD.  

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