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CDSQR4448-HF PDF预览

CDSQR4448-HF

更新时间: 2024-11-16 06:47:19
品牌 Logo 应用领域
上华 - COMCHIP 整流二极管开关
页数 文件大小 规格书
4页 192K
描述
SMD Switching Diode

CDSQR4448-HF 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:1.49
Is Samacsys:N配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.72 VJESD-30 代码:R-PBCC-N2
JESD-609代码:e4最大非重复峰值正向电流:2 A
元件数量:1端子数量:2
最高工作温度:125 °C最低工作温度:-40 °C
最大输出电流:0.125 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):260最大功率耗散:0.125 W
最大重复峰值反向电压:100 V最大反向恢复时间:0.009 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Gold (Au)端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
Base Number Matches:1

CDSQR4448-HF 数据手册

 浏览型号CDSQR4448-HF的Datasheet PDF文件第2页浏览型号CDSQR4448-HF的Datasheet PDF文件第3页浏览型号CDSQR4448-HF的Datasheet PDF文件第4页 
SMD Switching Diode  
SMD Diodes Specialist  
(RoHS Device)  
CDSQR4448-HF  
High Speed  
Features  
Halogen free.  
0402(1005)  
0.041(1.05)  
0.037(0.95)  
Fast Switching Speed.  
Designed for mounting on small surface.  
Extremely thin/leadless package.  
0.026(0.65)  
0.022(0.55)  
Mechanical data  
Case: 0402(1005) standard package,  
0.022(0.55)  
0.018(0.45)  
molded plastic.  
Terminals: Gold plated, solderable per  
MIL-STD-750,method 2026.  
0.012(0.30) Typ.  
Marking Code: Cathode band & S5  
Mounting position: Any  
Weight: 0.001 gram(approx.).  
0.020(0.50) Typ.  
Dimensions in inches and (millimeter)  
O
Maximum Rating (at TA=25 C unless otherwise noted)  
Symbol  
Typ  
Max Unit  
Parameter  
Repetitive peak reverse voltage  
Conditions  
Min  
VRRM  
100  
V
Reverse voltage  
VR  
80  
V
Average forward current  
IO  
125  
mA  
2
1
TP = 1uS  
TP = 8.3mS  
Forward current,surge peak  
IFSM  
A
Power Dissipation  
Storage temperature  
Junction temperature  
PD  
TSTG  
Tj  
125  
mW  
O
-40  
+125  
+125  
C
O
C
O
Electrical Characteristics (at TA=25 C unless otherwise noted)  
Parameter  
Conditions  
Symbol Min Typ Max Unit  
IF = 5 mA  
IF= 100 mA  
0.72  
Forward voltage  
VF  
0.62  
V
1
VR = 20 V  
VR = 80 V  
25  
Reverse current  
IR  
nA  
PF  
nS  
100  
Capacitance between terminals f = 1 MHZ, and 0.5 VDC reverse voltage  
CT  
Trr  
9
9
Reverse recovery time  
IF = IR = 10mA,Irr=0.1 X IR,RL=100ohm  
REV:B  
Page 1  
QW-G0011  
Comchip Technology CO., LTD.  

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