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CDSOT23-T24CAN-Q PDF预览

CDSOT23-T24CAN-Q

更新时间: 2024-09-28 13:06:47
品牌 Logo 应用领域
伯恩斯 - BOURNS 二极管电视
页数 文件大小 规格书
4页 298K
描述
Trans Voltage Suppressor Diode,

CDSOT23-T24CAN-Q 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:1.65其他特性:LOW CAPACITANCE
最大击穿电压:32 V最小击穿电压:26.2 V
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:3
最高工作温度:150 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL参考标准:AEC-Q101; IEC-61000-4-2, 4-5
表面贴装:YES技术:AVALANCHE
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

CDSOT23-T24CAN-Q 数据手册

 浏览型号CDSOT23-T24CAN-Q的Datasheet PDF文件第2页浏览型号CDSOT23-T24CAN-Q的Datasheet PDF文件第3页浏览型号CDSOT23-T24CAN-Q的Datasheet PDF文件第4页 
Features  
Applications  
Lead free as standard  
RoHS compliant*  
Protects 1 or 2 lines  
RS-232, RS-422 & RS-423 data lines  
Portable electronics  
Wireless bus protection  
Control & monitoring systems  
Unidirectional & bidirectional  
configurations  
ESD protection > 40 KV  
CDSOT23-T03~T36C – TVS Diode Array Series  
General Information  
The markets of portable communications, computing and video equipment are  
challenging the semiconductor industry to develop increasingly smaller electronic  
components.  
2
1
Bourns offers Transient Voltage Suppressor Array diodes for surge and ESD  
protection applications, in compact chip package SOT23 size format. The Transient  
Voltage Supressor Array series offers a choice of voltage types ranging from 3 V to  
36 V. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle on  
standard pick and place equipment and their flat configuration minimizes roll away.  
3
The Bourns device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC  
61000-4-5 (Surge) requirements.  
2
1
Thermal Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Symbol  
TJ  
Value  
Unit  
°C  
Operating Temperature  
Storage Temperature  
-55 to +150  
-55 to +150  
TSTG  
°C  
3
Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
CDSOT23-  
Unit  
Uni- Bi- Uni- Bi- Uni- Bi- Uni- Bi- Uni- Bi- Uni- Bi- Uni- Bi-  
T03 T03C T05 T05C T08 T08C T12 T12C T15 T15C T24 T24C T36 T36C  
Parameter  
Symbol  
Breakdown Voltage @ 1 mA  
Working Peak Voltage  
VBR  
4.0  
3.3  
6.0  
5.0  
8.5  
8.0  
13.3  
12.0  
16.7  
15.0  
26.7  
24.0  
40.0  
36.0  
V
V
VWM  
Maximum Clamping Voltage  
VF  
VF  
7.0  
9.8  
13.4  
19.0  
24.0  
43.0  
51.0  
V
V
1
V
C
@ I  
P
Maximum Clamping Voltage  
10.9 V  
@ 43 A  
13.5 V  
@ 42 A  
16.9 V  
@ 34 A  
25.9 V  
@ 27 A  
30.0 V  
@ 17 A  
49.0 V  
@ 12 A  
76.8 V  
@ 9 A  
1
@ 8/20 µs V @ I  
C
PP  
Maximum Leakage Current  
@ V  
ID  
125  
500  
300  
20  
10  
2
1
1
1
µA  
pF  
WM  
Maximum Cap Undirectional  
@ 0 V, 1 MHz  
Cj(SD)  
350  
210  
250  
150  
150  
100  
60  
88  
63  
80  
60  
Maximum Cap Bidirectional  
@ 0 V, 1 MHz  
Cj(SD)  
PPP  
VF  
90  
500  
1.5  
pF  
W
V
Peak Pulse Power (tp = 8/20 µs)2  
Forward Voltage @ 100 mA,  
300 µs – Square Wave3  
Notes:  
1. See Pulse Wave Form.  
2. See Peak Pulse Power vs. Pulse Time.  
3. Only applies to unidirectional devices.  
4. Part numbers with a “C” suffix are bidirectional devices, i.e., CDSOT23-T03C.  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  

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