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CDNBS08-PLC03-6_12 PDF预览

CDNBS08-PLC03-6_12

更新时间： 2022-06-12 07:26:03
品牌 Logo 应用领域
伯恩斯 - BOURNS 二极管电视
页数 文件大小 规格书
4页 322K
描述
Steering Diode/TVS Array Combo

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CDNBS08-PLC03-6_12 数据手册

 浏览型号CDNBS08-PLC03-6_12的Datasheet PDF文件第2页浏览型号CDNBS08-PLC03-6_12的Datasheet PDF文件第3页浏览型号CDNBS08-PLC03-6_12的Datasheet PDF文件第4页 
Features  
Applications  
■ Lead free as standard  
■ RoHS compliant*  
■ T1/E1 & T3/E3 line cards  
■ ISDN U-Interface and S/T interface  
■ xDSL  
■ Telcordia GR1089 (Intra-Building)  
■ Protects two lines  
■ Ethernet - 10/100 Base T  
■ ESD protection 30 kV max.  
■ Low capacitance: 6 pF  
CDNBS08-PLC03-6 Steering Diode/TVS Array Combo  
General Information  
8
7
6
5
The markets of portable communications, computing and video equipment are challenging  
the semiconductor industry to develop increasingly smaller electronic components.  
Bourns offers Steering Diode/Transient Voltage Suppressor Array combination diodes for  
surge and ESD protection applications in an 8 lead narrow body SOIC package size format.  
®
The Bourns device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC  
61000-4-5 (Surge) requirements.  
1
2
3
4
Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Symbol  
Min.  
Nom.  
16  
6
Max.  
20  
8
Unit  
pF  
pF  
V
1
2
Capacitance @ 0 V 1 MHz  
Capacitance @ 0 V 1 MHz  
Working Peak Voltage  
C
C
j(SD)  
j(SD)  
V
6
WM  
Min. Breakdown Voltage @ 1 mA  
V
6.8  
V
BR  
20.0 V  
3,4  
Max. Clamping Voltage @ 8/20 µs V @ I  
V
C
V
C
PP  
@ 100.0 A  
25  
Max. Leakage Current @ V  
I
µA  
WM  
D
ESD Protection: IEC 61000-4-2  
Contact Discharge  
8
30  
30  
ESD  
kV  
W
A
Air Discharge  
15  
5
Peak Pulse Power (t = 8/20 µs)  
P
2000  
p
PP  
EFT Protection: IEC 61000-4-4 @ 5/50 ns  
40  
--  
Surge Protection: IEC 61000-4-5 @ 8/20 µs  
L4 (Line-Gnd)  
95  
48  
A
A
L4 (Line-Line)  
Surge Protection: Telcordia GR1089  
100  
(Intra-Building) @ 2/10 µs  
Notes:  
1. Measured between I/O pins and ground (pin 1 or 2).  
2. Measured between I/O pins (pins 1 to 4).  
3. See Pulse Wave Form. For an 8/20 µs waveform, apply positive pulse from pin 1 or 8 to pin 2 or 3 (ground).  
4. Measured between pin 1 or 8 to pin 2 or 3; pin 1 or 8 to pin 4 or 5.  
5. See Peak Pulse Power vs. Pulse Time.  
Thermal Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Junction Temperature Range  
Storage Temperature Range  
Symbol  
Min.  
-55  
-55  
Nom.  
+25  
+25  
Max.  
+150  
+150  
Unit  
°C  
°C  
T
J
T
STG  
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
1234

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