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Datasheet > CDNBS08-SLVU2.8-8_12
CDNBS08-SLVU2.8-8_12 PDF预览

CDNBS08-SLVU2.8-8_12

更新时间： 2022-06-12 08:22:32
品牌 Logo 应用领域
伯恩斯 - BOURNS 电视
页数 文件大小 规格书
4页 343K
描述
Low Capacitance TVS Array

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中文翻译

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CDNBS08-SLVU2.8-8_12 数据手册

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Features  
Applications  
■ RoHS compliant*  
■ Ethernet - 10/100/1000 Base T  
■ Personal digital assistants  
■ Handheld electronics  
■ Cellular phones  
■ Protects up to four I/O ports  
■ Bidirectional configuration  
■ ESD protection  
■ Low capacitance: 6 pF  
■ Video cards  
CDNBS08-SLVU2.8-8 - Low Capacitance TVS Array  
General Information  
The markets of portable communications, computing and video equipment are challenging  
the semiconductor industry to develop increasingly smaller electronic components.  
8
7
6
5
Bourns offers Transient Voltage Suppressor Array combination diodes for surge and ESD  
®
protection applications in an eight lead narrow body SOIC package size format. Bourns  
Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place  
equipment and their flat configuration minimizes roll away.  
®
The Bourns device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC  
1
2
3
4
61000-4-5 (Surge) requirements.  
Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Peak Pulse Current (t = 8/20 µs)  
Symbol  
Min.  
Nom.  
Max.  
Unit  
A
W
V
I
30  
600  
2.8  
p
PP  
1
Peak Pulse Power (t = 8/20 µs)  
P
p
PP  
Working Voltage  
V
WM  
Breakdown Voltage @ 1 mA  
V
I
C
3.0  
2.8  
V
BR  
Leakage Current @ V  
1.0  
µA  
pF  
V
WM  
D
Capacitance @ 0 V, 1 MHz  
Snapback Voltage @ 50 mA  
6
ESD Protection per IEC 61000-4-2  
Contact Discharge  
8
ESD  
EFT  
kV  
A
Air Discharge  
15  
EFT Protection per IEC 61000-4-4 @ 5/50 ns  
2
60  
@ I = 5 A  
V
C
8.5  
V
Surge Protection per  
IEC 61000-4-5  
Clamping Voltage  
@ 8/20 µs  
P
2
@ I = 24 A  
V
V
15  
17  
V
V
P
C
C
2
@ I = 30 A  
PP  
Notes:  
1. See Peak Pulse Power vs. Pulse Time.  
2. Each differential line pair.  
Thermal Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Junction Temperature Range  
Storage Temperature Range  
Symbol  
Min.  
-55  
-55  
Nom.  
+25  
+25  
Max.  
+125  
+150  
Unit  
°C  
°C  
T
J
T
STG  
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
1234

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