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CDBC360-HF PDF预览

CDBC360-HF

更新时间: 2024-11-25 12:20:47
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描述
SMD Schottky Barrier Rectifiers

CDBC360-HF 数据手册

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SMD Schottky Barrier Rectifiers  
CDBC320-HF Thru. CDBC3100-HF  
Reverse Voltage: 20 to 100 Volts  
Forward Current: 3.0 Amp  
RoHS Device  
Halogen Free  
DO-214AB (SMC)  
Features  
-Low Profile surface mount applications  
in order to optimize board space.  
-Low power loss, high efficiency.  
-Hight current capability, low forward voltage drop.  
-Hight surge capability.  
-Guardring for overvoltage protection.  
-Ultra high-speed switching.  
-Silicon epitaxial planar chip,metal silicon junction.  
0.126 (3.20)  
0.114 (2.90)  
0.245 (6.22)  
0.220 (5.59)  
0.280 (7.11)  
0.260 (6.60)  
0.019 (0.485)  
MAX.  
0.114 (2.90)  
0.075 (1.90)  
Mechanical data  
-Epoxy: UL94-V0 rate flame retardant.  
-Case: Molded plastic, DO-214AB / SMC  
0.008(0.20)  
0.004(0.10)  
0.063 (1.60)  
0.030 (0.76)  
0.325 (8.25)  
0.305 (7.75)  
-Terminals: solderable per MIL-STD-750,  
method 2026.  
-Polarity: Indicated by cathode band.  
-Weight: 0.226 grams  
Dimensions in inches and (millimeter)  
Maximum Ratings and Electrical Characteristics  
Ratings at Ta=25°C unless otherwise noted.  
Single phase, half wave, 60Hz, resistive or inductive loaded.  
For capacitive load, derate current by 20% .  
CDBC  
CDBC  
CDBC  
CDBC  
Parameter  
Symbol  
Unit  
320-HF  
340-HF  
360-HF  
3100-HF  
Max. repetitive peak reverse voltage  
Max. DC blocking voltage  
Max. RMS voltage  
VRRM  
VDC  
VRMS  
VF  
20  
20  
40  
40  
60  
60  
100  
100  
70  
V
V
14  
28  
42  
V
Max. instantaneous forward voltage @  
3.0A, TA=25°C  
0.45  
0.50  
0.70  
0.81  
V
Operating Temperature  
TJ  
-50 to +150  
°C  
Symbol  
IO  
Parameter  
Conditions  
MIN.  
TYP.  
MAX.  
Units  
see Fig.1  
Forward rectified current  
Forward surge current  
3.0  
A
A
8.3ms single half sine-wave superimposed  
on rate load (JEDEC method)  
IFSM  
70  
VR =VRRM TA=25°C  
VR =VRRM TA=100°C  
IR  
IR  
0.5  
20  
mA  
mA  
Reverse Current  
Thermal Resistance  
Junction to ambient  
RθJA  
CJ  
55  
°C/W  
Diode Junction capacitance f=1MHZ and applied 4V DC reverse Voltage  
Storage temperature  
250  
pF  
°C  
TSTG  
-50  
+175  
REV: A  
Page 1  
QW-JB032  
Comchip Technology CO., LTD.  

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