SMD Schottky Barrier Rectifiers
CDBC320-HF Thru. CDBC3100-HF
Reverse Voltage: 20 to 100 Volts
Forward Current: 3.0 Amp
RoHS Device
Halogen Free
DO-214AB (SMC)
Features
-Low Profile surface mount applications
in order to optimize board space.
-Low power loss, high efficiency.
-Hight current capability, low forward voltage drop.
-Hight surge capability.
-Guardring for overvoltage protection.
-Ultra high-speed switching.
-Silicon epitaxial planar chip,metal silicon junction.
0.126 (3.20)
0.114 (2.90)
0.245 (6.22)
0.220 (5.59)
0.280 (7.11)
0.260 (6.60)
0.019 (0.485)
MAX.
0.114 (2.90)
0.075 (1.90)
Mechanical data
-Epoxy: UL94-V0 rate flame retardant.
-Case: Molded plastic, DO-214AB / SMC
0.008(0.20)
0.004(0.10)
0.063 (1.60)
0.030 (0.76)
0.325 (8.25)
0.305 (7.75)
-Terminals: solderable per MIL-STD-750,
method 2026.
-Polarity: Indicated by cathode band.
-Weight: 0.226 grams
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Ratings at Ta=25°C unless otherwise noted.
Single phase, half wave, 60Hz, resistive or inductive loaded.
For capacitive load, derate current by 20% .
CDBC
CDBC
CDBC
CDBC
Parameter
Symbol
Unit
320-HF
340-HF
360-HF
3100-HF
Max. repetitive peak reverse voltage
Max. DC blocking voltage
Max. RMS voltage
VRRM
VDC
VRMS
VF
20
20
40
40
60
60
100
100
70
V
V
14
28
42
V
Max. instantaneous forward voltage @
3.0A, TA=25°C
0.45
0.50
0.70
0.81
V
Operating Temperature
TJ
-50 to +150
°C
Symbol
IO
Parameter
Conditions
MIN.
TYP.
MAX.
Units
see Fig.1
Forward rectified current
Forward surge current
3.0
A
A
8.3ms single half sine-wave superimposed
on rate load (JEDEC method)
IFSM
70
VR =VRRM TA=25°C
VR =VRRM TA=100°C
IR
IR
0.5
20
mA
mA
Reverse Current
Thermal Resistance
Junction to ambient
RθJA
CJ
55
°C/W
Diode Junction capacitance f=1MHZ and applied 4V DC reverse Voltage
Storage temperature
250
pF
°C
TSTG
-50
+175
REV: A
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QW-JB032
Comchip Technology CO., LTD.