Datasheet > CDBC360LR-HF

CDBC360LR-HF

更新时间： 2024-11-21 07:19:59

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上华 - COMCHIP		/
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4页	92K
描述
Low VF Low IR SMD Schottky Barrier Rectifiers

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中文翻译

获取价格

数据手册

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CDBC360LR-HF 数据手册

Low VF Low IR SMD Schottky Barrier Rectifiers

CDBC320LR-HF Thru. CDBC3200LR-HF

Reverse Voltage: 20 to 200 Volts

Forward Current: 3.0 Amp

RoHS Device

Halogen Free

Features

DO-214AB (SMC)

-Low Profile surface mount applications

in order to optimize board space.

-Low power loss, high efficiency.

-Hight current capability, low forward voltage drop.

-Hight surge capability.

0.126 (3.20)

0.114 (2.90)

0.245 (6.22)

0.220 (5.59)

-Guardring for overvoltage protection.

-Ultra high-speed switching.

0.280 (7.11)

0.260 (6.60)

-Silicon epitaxial planar chip,metal silicon junction.

0.019 (0.485)

MAX.

Mechanical data

0.114 (2.90)

0.075 (1.90)

-Epoxy: UL94-V0 rate flame retardant.

-Case: Molded plastic, DO-214AB / SMC

0.008(0.20)

0.004(0.10)

0.325 (8.25)

0.305 (7.75)

0.063 (1.60)

0.030 (0.76)

-Terminals: solderable per MIL-STD-750,

method 2026.

-Polarity: Indicated by cathode band.

-Weight: 0.226 grams

Dimensions in inches and (millimeter)

Maximum Ratings and Electrical Characteristics

Ratings at Ta=25°C unless otherwise noted.

Single phase, half wave, 60Hz, resistive or inductive loaded.

For capacitive load, derate current by 20% .

CDBC

Parameter

Symbol

Units

320LR-HF 340LR-HF 360LR-HF 3100LR-HF 3150LR-HF 3200LR-HF

Max. Repetitive peak reverse voltage

Max. DC blocking voltage

Max. RMS voltage

VRRM

VDC

VRMS

100

150

105

0.82

200

140

0.85

Max. Instantaneous forward voltage

@3.0A, TA=25°C

0.40

0.45

0.55

0.75

Operating Temperature

-50 to +150

-50 to +175

°C

Symbol

Parameter

Conditions

MIN.

TYP.

MAX.

Units

see Fig.1

Forward rectified current

Forward surge current

3.0

8.3ms single half sine-wave superimposed

on rate load (JEDEC method)

IFSM

125

VR =VRRM TA=25°C

VR =VRRM TA=100°C

0.5

Reverse Current

Thermal Resistance

Junction to ambient

RθJA

°C/W

Diode Junction capacitance

Storage temperature

f=1MHZ and applied 4V DC reverse Voltage

250

°C

TSTG

-50

+175

REV:A

Page 1

QW-JL023

Comchip Technology CO., LTD.

12 3 4

中文翻译

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