Datasheet > CC5401

CC5401

更新时间： 2024-11-13 03:24:59

品牌	Logo	应用领域
CDIL		高压
页数	文件大小	规格书
3页	61K
描述
PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTO

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中文翻译

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技术参数
数据手册

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CC5401 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.61	最大集电极电流 (IC)：	0.6 A
配置：	Single	最小直流电流增益 (hFE)：	50
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	1.5 W	子类别：	Other Transistors
表面贴装：	NO	标称过渡频率 (fT)：	100 MHz
Base Number Matches：	1

CC5401 数据手册

IS/ISO 9002

Lic# QSC/L- 000019.2

IS / IECQC 700000

IS / IECQC 750100

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR

CC5401

(9AW)

TO-92

BCE

MARKING : CC

5401

High Voltage PNP Transistor For General Purpose And Telephony Applications.

ABSOLUTE MAXIMUM RATINGS.

DESCRIPTION

SYMBOL

VCEO

VCBO

VEBO

VALUE

150

160

5.0

600

625

5.0

1.5

UNIT

Collector -Emitter Voltage

Collector -Base Voltage

Emitter -Base Voltage

Collector Current Continuous

Power Dissipation @Ta=25 degC

Derate Above 25 deg C

Power Dissipation @Tc=25 degC

Derate Above 25 deg C

Junction Temperature

Storage Temperature

mw/deg C

deg C

Tstg

150

-55 to +150

THERMAL RESISTANCE

Junction to Case

Junction to Ambient

Rth(j-c)

Rth(j-a)

83.3

200

deg C/W

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

150

160

5.0

TYP

MAX

UNIT

Collector -Emitter Voltage

Collector -Base Voltage

Emitter -Base Voltage

Collector-Cut off Current

VCEO*

VCBO

VEBO

ICBO

IC=1uA,IB=0

IC=100uA.IE=0

IE=10uA, IC=-0

VCB=160V, IE=0

Ta=100 deg C

VCB=160V, IE=0

VCE=150V, IB=0

VEB=4V, IC=0

IC=1mA,VCE=5V

IC=10mA,VCE=5V

IC=50mA,VCE=5V

1.0

320

ICEO

IEBO

hFE*

Emitter-Cut off Current

DC Current Gain

Continental Device India Limited

Page 1 of 3

Data Sheet

12 3

中文翻译

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