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CAT28LV64KI-35TE13 PDF预览

CAT28LV64KI-35TE13

更新时间: 2024-12-01 14:30:15
品牌 Logo 应用领域
安森美 - ONSEMI 可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
15页 146K
描述
IC 8K X 8 EEPROM 3V, 350 ns, PDSO28, 0.300 INCH, EIAJ, SOIC-28, Programmable ROM

CAT28LV64KI-35TE13 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP,针数:28
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.03
最长访问时间:350 nsJESD-30 代码:R-PDSO-G28
JESD-609代码:e0长度:17.9 mm
内存密度:65536 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:28
字数:8192 words字数代码:8000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:8KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):240
编程电压:3 V认证状态:Not Qualified
座面最大高度:2.65 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN LEAD
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:7.5 mmBase Number Matches:1

CAT28LV64KI-35TE13 数据手册

 浏览型号CAT28LV64KI-35TE13的Datasheet PDF文件第2页浏览型号CAT28LV64KI-35TE13的Datasheet PDF文件第3页浏览型号CAT28LV64KI-35TE13的Datasheet PDF文件第4页浏览型号CAT28LV64KI-35TE13的Datasheet PDF文件第5页浏览型号CAT28LV64KI-35TE13的Datasheet PDF文件第6页浏览型号CAT28LV64KI-35TE13的Datasheet PDF文件第7页 
CAT28LV64  
64 kb CMOS Parallel  
EEPROM  
Description  
The CAT28LV64 is a low voltage, low power, CMOS Parallel  
EEPROM organized as 8K x 8bits. It requires a simple interface for  
insystem programming. Onchip address and data latches,  
http://onsemi.com  
selftimed write cycle with autoclear and V power up/down write  
CC  
protection eliminate additional timing and protection hardware. DATA  
Polling and Toggle status bit signal the start and end of the selftimed  
write cycle. Additionally, the CAT28LV64 features hardware and  
software write protection.  
The CAT28LV64 is manufactured using ON Semiconductor’s  
advanced CMOS floating gate technology. It is designed to endure  
100,000 program/erase cycles and has a data retention of 100 years.  
The device is available in JEDEC approved 28pin DIP, 28pin TSOP,  
28pin SOIC or 32pin PLCC packages.  
PDIP28  
P, L SUFFIX  
CASE 646AE  
SOIC28  
J, K, W, X SUFFIX  
CASE 751BM  
Features  
3.0 V to 3.6 V Supply  
Read Access Times:  
– 150/200/250 ns  
PLCC32  
N, G SUFFIX  
CASE 776AK  
TSOP28  
H13 SUFFIX  
CASE 318AE  
Low Power CMOS Dissipation:  
– Active: 8 mA Max.  
– Standby: 100 mA Max.  
Simple Write Operation:  
– Onchip Address and Data Latches  
– Selftimed Write Cycle with Autoclear  
Fast Write Cycle Time:  
– 5 ms Max.  
Commercial, Industrial and Automotive Temperature Ranges  
CMOS and TTL Compatible I/O  
Automatic Page Write Operation:  
– 1 to 32 bytes in 5 ms  
– Page Load Timer  
PIN FUNCTION  
Pin Name  
Function  
Address Inputs  
A A  
0
12  
I/O I/O  
Data Inputs/Outputs  
Chip Enable  
0
7
CE  
OE  
Output Enable  
Write Enable  
WE  
End of Write Detection:  
V
3.0 V to 3.6 V Supply  
Ground  
CC  
– Toggle bit  
V
SS  
– DATA Polling  
Hardware and Software Write Protection  
NC  
No Connect  
100,000 Program/Erase Cycles  
100 Year Data Retention  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 15 of this data sheet.  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
October, 2009 Rev. 7  
CAT28LV64/D  

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