Datasheet > CAT28C65BT13A-12

CAT28C65BT13A-12

更新时间： 2024-10-29 19:20:07

品牌	Logo	应用领域
安森美 - ONSEMI		可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管内存集成电路
页数	文件大小	规格书
13页	78K
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中文翻译

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数据手册

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CAT28C65BT13A-12 数据手册

CAT28C65B

64K-Bit CMOS PARALLEL EEPROM

FEATURES

■ Fast read access times:

■ Commercial, industrial and automotive

– 90/120/150ns

temperature ranges

■ Low power CMOS dissipation:

– Active: 25 mA max.

■ Automatic page write operation:

– 1 to 32 bytes in 5ms

– Standby: 100 µA max.

– Page load timer

■ Simple write operation:

■ End of write detection:

– Toggle bit

– On-chip address and data latches

– Self-timed write cycle with auto-clear

– DATA polling

– RDY/BUSY

■ Fast write cycle time:

– 5ms max

■ 100,000 program/erase cycles

■ 100 year data retention

■ CMOS and TTL compatible I/O

■ Hardware and software write protection

DESCRIPTION

The CAT28C65B is a fast, low power, 5V-only CMOS

parallel EEPROM organized as 8K x 8-bits. It requires a

simple interface for in-system programming. On-chip

address and data latches, self-timed write cycle with

auto-clear and V_CCpower up/down write protection

eliminate additional timing and protection hardware.

DATA Polling, a RDY/BUSY pin and Toggle status bits

signal the start and end of the self-timed write cycle.

Additionally, the CAT28C65B features hardware and

software write protection.

The CAT28C65B is manufactured using Catalyst’s

advancedCMOSfloatinggatetechnology.Itisdesigned

to endure 100,000 program/erase cycles and has a data

retentionof100years.ThedeviceisavailableinJEDEC-

approved 28-pin DIP, 28-pin TSOP, 28-pin SOIC or 32-

pin PLCC packages.

BLOCK DIAGRAM

8,192 x 8

EEPROM

ARRAY

ROW

DECODER

ADDR. BUFFER

& LATCHES

A –A

INADVERTENT

WRITE

PROTECTION

HIGH VOLTAGE

GENERATOR

32 BYTE PAGE

CONTROL

LOGIC

I/O BUFFERS

DATA POLLING,

TOGGLE BIT &

TIMER

RDY/BUSY LOGIC

I/O –I/O

ADDR. BUFFER

& LATCHES

A –A

COLUMN

DECODER

RDY/BUSY

Characteristics subject to change without notice

Doc. No. MD-1009, Rev. H

12 3 4 5 6 7...13

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