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CAT28C65BLI-12T

更新时间: 2024-10-29 03:22:15
品牌 Logo 应用领域
CATALYST 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
13页 418K
描述
64K-Bit CMOS PARALLEL EEPROM

CAT28C65BLI-12T 数据手册

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E
CAT28C65B  
64K-Bit CMOS PARALLEL EEPROM  
TM  
FEATURES  
I Fast read access times:  
I Commercial, industrial and automotive  
– 90/120/150ns  
temperature ranges  
I Low power CMOS dissipation:  
– Active: 25 mA max.  
I Automatic page write operation:  
– 1 to 32 bytes in 5ms  
– Standby: 100 µA max.  
– Page load timer  
I Simple write operation:  
I End of write detection:  
– Toggle bit  
– On-chip address and data latches  
– Self-timed write cycle with auto-clear  
DATA polling  
– RDY/BUSY  
I Fast write cycle time:  
– 5ms max  
I 100,000 program/erase cycles  
I 100 year data retention  
I CMOS and TTL compatible I/O  
I Hardware and software write protection  
DESCRIPTION  
The CAT28C65B is a fast, low power, 5V-only CMOS  
parallel EEPROM organized as 8K x 8-bits. It requires a  
simple interface for in-system programming. On-chip  
address and data latches, self-timed write cycle with  
auto-clear and VCC power up/down write protection  
eliminate additional timing and protection hardware.  
DATA Polling, a RDY/BUSY pin and Toggle status bits  
signal the start and end of the self-timed write cycle.  
Additionally, the CAT28C65B features hardware and  
software write protection.  
The CAT28C65B is manufactured using Catalyst’s  
advancedCMOSfloatinggatetechnology.Itisdesigned  
to endure 100,000 program/erase cycles and has a data  
retentionof100years.ThedeviceisavailableinJEDEC-  
approved 28-pin DIP, 28-pin TSOP, 28-pin SOIC or 32-  
pin PLCC packages.  
BLOCK DIAGRAM  
8,192 x 8  
EEPROM  
ARRAY  
ROW  
DECODER  
ADDR. BUFFER  
& LATCHES  
A A  
5
12  
INADVERTENT  
WRITE  
PROTECTION  
HIGH VOLTAGE  
GENERATOR  
32 BYTE PAGE  
REGISTER  
V
CC  
CE  
OE  
WE  
CONTROL  
LOGIC  
I/O BUFFERS  
DATA POLLING,  
TOGGLE BIT &  
TIMER  
RDY/BUSY LOGIC  
I/O I/O  
0
7
ADDR. BUFFER  
& LATCHES  
A A  
COLUMN  
DECODER  
0
4
RDY/BUSY  
© 2005 by Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
Doc. No. 1009, Rev. E  
1

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