Datasheet > CAT28C512

CAT28C512

更新时间： 2024-10-27 06:46:11

品牌	Logo	应用领域
安森美 - ONSEMI		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
12页	82K
描述
512K-Bit CMOS PARALLEL EEPROM

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中文翻译

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数据手册

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CAT28C512 数据手册

CAT28C512/513

512K-Bit CMOS PARALLEL EEPROM

FEATURES

■ Fast Read Access Times: 120/150 ns

■ Automatic Page Write Operation:

–1 to 128 Bytes in 5ms

–Page Load Timer

■ Low Power CMOS Dissipation:

–Active: 50 mA Max.

–Standby: 200 µA Max.

■ End of Write Detection:

–Toggle Bit

■ Simple Write Operation:

–DATA Polling

–On-Chip Address and Data Latches

–Self-Timed Write Cycle with Auto-Clear

■ Hardware and Software Write Protection

■ 100,000 Program/Erase Cycles

■ 100 Year Data Retention

■ Fast Write Cycle Time:

–5ms Max

■ CMOS and TTL Compatible I/O

■ Commercial, Industrial and Automotive

Temperature Ranges

DESCRIPTION

The CAT28C512/513 is manufactured using Catalyst’s

advancedCMOSfloatinggatetechnology.Itisdesigned

to endure 100,000 program/erase cycles and has a data

retention of 100 years. The device is available in JEDEC

approved 32-pin DIP, PLCC and TSOP packages.

TheCAT28C512/513isafast,lowpower,5V-onlyCMOS

parallel EEPROM organized as 64K x 8-bits. It requires

a simple interface for in-system programming. On-chip

address and data latches, self-timed write cycle with

auto-clear and V_CCpower up/down write protection

eliminate additional timing and protection hardware.

DATA Polling and Toggle status bits signal the start and

end of the self-timed write cycle. Additionally, the

CAT28C512/513 features hardware and software write

protection.

BLOCK DIAGRAM

65,536 x 8

EEPROM

ARRAY

ROW

DECODER

ADDR. BUFFER

& LATCHES

A –A

INADVERTENT

WRITE

PROTECTION

HIGH VOLTAGE

GENERATOR

128 BYTE PAGE

CONTROL

TIMER

I/O BUFFERS

DATA POLLING

AND

TOGGLE BIT

I/O –I/O

ADDR. BUFFER

& LATCHES

A –A

COLUMN

DECODER

Characteristics subject to change without notice

Doc. No. MD-1007, Rev. I

12 3 4 5 6 7...12

中文翻译

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