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CAT28C256FP-25 PDF预览

CAT28C256FP-25

更新时间: 2024-10-27 19:20:59
品牌 Logo 应用领域
安森美 - ONSEMI 可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
14页 138K
描述
32KX8 EEPROM 5V, 250ns, PDIP28, 0.600 INCH, PLASTIC, DIP-28

CAT28C256FP-25 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:DIP
包装说明:DIP,针数:28
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.3
Is Samacsys:N最长访问时间:250 ns
JESD-30 代码:R-PDIP-T28JESD-609代码:e0
长度:36.703 mm内存密度:262144 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:28
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:32KX8
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL峰值回流温度(摄氏度):240
编程电压:5 V认证状态:Not Qualified
座面最大高度:5.08 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:15.24 mmBase Number Matches:1

CAT28C256FP-25 数据手册

 浏览型号CAT28C256FP-25的Datasheet PDF文件第2页浏览型号CAT28C256FP-25的Datasheet PDF文件第3页浏览型号CAT28C256FP-25的Datasheet PDF文件第4页浏览型号CAT28C256FP-25的Datasheet PDF文件第5页浏览型号CAT28C256FP-25的Datasheet PDF文件第6页浏览型号CAT28C256FP-25的Datasheet PDF文件第7页 
CAT28C256  
256 kb Parallel EEPROM  
Description  
The CAT28C256 is a fast, low power, 5 Vonly CMOS Parallel  
EEPROM organized as 32K x 8bits. It requires a simple interface for  
insystem programming. Onchip address and data latches,  
selftimed write cycle with autoclear and V power up/down write  
http://onsemi.com  
CC  
protection eliminate additional timing and protection hardware. DATA  
Polling and Toggle status bits signal the start and end of the selftimed  
write cycle. Additionally, the CAT28C256 features hardware and  
software write protection.  
The CAT28C256 is manufactured using ON Semiconductor’s  
advanced CMOS floating gate technology. It is designed to endure  
100,000 program/erase cycles and has a data retention of 100 years.  
The device is available in JEDEC approved 28pin DIP, 28pin TSOP  
or 32pin PLCC packages.  
TSOP28  
T13, H13 SUFFIX  
CASE 318AE  
Features  
Fast Read Access Times: 120/150 ns  
Low Power CMOS Dissipation:  
– Active: 25 mA Max.  
– Standby: 150 mA Max.  
PDIP28  
P, L SUFFIX  
CASE 646AE  
PLCC32  
N, G SUFFIX  
CASE 776AK  
Simple Write Operation:  
– Onchip Address and Data Latches  
– Selftimed Write Cycle with Autoclear  
Fast Write Cycle Time:  
PIN FUNCTION  
5 ms Max.  
Pin Name  
Function  
Address Inputs  
CMOS and TTL Compatible I/O  
Hardware and Software Write Protection  
Automatic Page Write Operation:  
1 to 64 Bytes in 5 ms  
Page Load Timer  
A A  
0
14  
I/O I/O  
Data Inputs/Outputs  
Chip Enable  
Output Enable  
Write Enable  
5 V Supply  
0
7
CE  
OE  
End of Write Detection:  
WE  
Toggle Bit  
V
CC  
DATA Polling  
V
Ground  
SS  
100,000 Program/Erase Cycles  
100 Year Data Retention  
Commercial, Industrial and Automotive Temperature Ranges  
NC  
No Connect  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 14 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
December, 2009 Rev. 6  
CAT28C256/D  

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