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CAT28C16AX-12T PDF预览

CAT28C16AX-12T

更新时间: 2024-10-26 11:47:07
品牌 Logo 应用领域
安森美 - ONSEMI 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
10页 127K
描述
16 kb CMOS Parallel EEPROM

CAT28C16AX-12T 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SOIC-24
针数:24Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.84最长访问时间:120 ns
命令用户界面:NO数据轮询:YES
数据保留时间-最小值:100耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G24长度:15.4 mm
内存密度:16384 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:24字数:2048 words
字数代码:2000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:2KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP24,.4
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:5 V编程电压:5 V
认证状态:Not Qualified座面最大高度:2.65 mm
最大待机电流:0.0001 A子类别:EEPROMs
最大压摆率:0.035 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:7.5 mm
最长写入周期时间 (tWC):5 ms

CAT28C16AX-12T 数据手册

 浏览型号CAT28C16AX-12T的Datasheet PDF文件第2页浏览型号CAT28C16AX-12T的Datasheet PDF文件第3页浏览型号CAT28C16AX-12T的Datasheet PDF文件第4页浏览型号CAT28C16AX-12T的Datasheet PDF文件第5页浏览型号CAT28C16AX-12T的Datasheet PDF文件第6页浏览型号CAT28C16AX-12T的Datasheet PDF文件第7页 
CAT28C16A  
16 kb CMOS Parallel  
EEPROM  
Description  
The CAT28C16A is a fast, low power, 5Vonly CMOS Parallel  
EEPROM organized as 2K x 8bits. It requires a simple interface for  
insystem programming. Onchip address and data latches,  
http://onsemi.com  
selftimed write cycle with autoclear and V power up/down write  
CC  
protection eliminate additional timing and protection hardware. DATA  
Polling signals the start and end of the selftimed write cycle.  
Additionally, the CAT28C16A features hardware write protection.  
The CAT28C16A is manufactured using ON Semiconductor’s  
advanced CMOS floating gate technology. It is designed to endure  
100,000 program/erase cycles and has a data retention of 100 years.  
The device is available in JEDEC approved 24pin DIP and SOIC or  
32pin PLCC packages.  
SOIC24  
J, K, W, X SUFFIX  
CASE 751BK  
Features  
Fast Read Access Times: 90 ns, 120 ns, 200 ns  
Low Power CMOS Dissipation:  
PDIP24  
L SUFFIX  
CASE 646AD  
PLCC32  
N, G SUFFIX  
CASE 776AK  
– Active: 25 mA Max.  
– Standby: 100 mA Max.  
Simple Write Operation:  
– Onchip Address and Data Latches  
– Selftimed Write Cycle with Autoclear  
PIN FUNCTION  
Pin Name  
Function  
Address Inputs  
Fast Write Cycle Time: 10 ms Max  
End of Write Detection: DATA Polling  
Hardware Write Protection  
CMOS and TTL Compatible I/O  
100,000 Program/Erase Cycles  
100 Year Data Retention  
Commercial, Industrial and Automotive Temperature Ranges  
A A  
0
10  
I/O I/O  
Data Inputs/Outputs  
Chip Enable  
Output Enable  
Write Enable  
5 V Supply  
0
7
CE  
OE  
WE  
V
CC  
V
Ground  
SS  
PIN CONFIGURATION  
NC  
No Connect  
DIP Package (L)  
SOIC Package (J, K, W, X)  
PLCC Package (N, G)  
1
2
3
24  
23  
22  
A
A
V
A
A
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 10 of this data sheet.  
7
CC  
4
3
2
1 32 31 30  
29  
6
8
5
6
7
8
A
A
A
A
A
A
A
A
A
NC  
NC  
OE  
A
10  
CE  
I/O  
6
5
4
3
2
1
0
8
A
5
9
28  
27  
26  
25  
24  
23  
22  
21  
9
4
5
6
7
8
21  
20  
19  
18  
17  
A
4
WE  
OE  
A
3
A
2
A
10  
9
TOP VIEW  
A
1
CE  
I/O  
10  
11  
12  
13  
A
0
7
9
16  
15  
14  
13  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
NC  
I/O  
0
6
5
4
3
7
I/O  
10  
11  
12  
0
6
1
14 15 16 17 18 19 20  
2
V
SS  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
October, 2009 Rev. 6  
CAT28C16A/D  

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