Datasheet > CAT22C10WI-30-TE13

CAT22C10WI-30-TE13

更新时间： 2024-10-28 04:10:23

品牌	Logo	应用领域
CATALYST		/
页数	文件大小	规格书
10页	505K
描述
256-Bit Nonvolatile CMOS Static RAM

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CAT22C10

256-Bit Nonvolatile CMOS Static RAM

FEATURES

■ Single 5V Supply

■ Low CMOS Power Consumption:

–Active: 40mA Max.

■ Fast RAM Access Times:

–Standby: 30 µA Max.

–200ns

–300ns

■ JEDEC Standard Pinouts:

–18-pin DIP

■ Infinite EEPROM to RAM Recall

■ CMOS and TTL Compatible I/O

■ Power Up/Down Protection

–16-pin SOIC

■ 10 Year Data Retention

■ Commercial, Industrial and Automotive

■ 100,000 Program/Erase Cycles (E²PROM)

Temperature Ranges

■ "Green" Package Options Available

DESCRIPTION

TheCAT22C10NVRAMisa256-bitnonvolatilememory

organized as 64 words x 4 bits. The high speed Static

RAM array is bit for bit backed up by a nonvolatile

EEPROM array which allows for easy transfer of data

from RAM array to EEPROM (STORE) and from

EEPROM to RAM (RECALL). STORE operations are

completed in 10ms max. and RECALL operations typi-

cally within 1.5µs. The CAT22C10 features unlimited

RAM write operations either through external RAM

writes or internal recalls from EEPROM. Internal false

store protection circuitry prohibits STORE operations

when V_CCis less than 3.0V.

The CAT22C10 is manufactured using Catalyst’s ad-

vanced CMOS floating gate technology. It is designed

to endure 100,000 program/erase cycles (EEPROM)

and has a data retention of 10 years. The device is

availableinJEDECapproved18-pinplasticDIPand16-

pin SOIC packages.

PIN FUNCTIONS

PIN CONFIGURATION

DIP Package (P, L)

SOIC Package (J, W)

Pin Name

A₀–A₅

I/O₀–I/O₃

Function

Address

Data In/Out

Write Enable

Chip Select

Recall

1 6

1 5

1 4

1 8

1 7

1 6

1 5

1 4

I/O

RECALL

STORE

V_CC

RECALL

STORE

Store

+5V

STORE

RECALL

V_SS

Ground

No Connect

Characteristics subject to change without notice

Doc. No. 1082, Rev. O

12 3 4 5 6 7...10

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