Datasheet > CA3227M

CA3227M

更新时间： 2024-11-10 22:36:07

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关光电二极管
页数	文件大小	规格书
7页	67K
描述
High-Frequency NPN Transistor Array For Low-Power Applications at Frequencies Up to 1.5GHz

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CA3227M 数据手册

CA3227

Data Sheet

May 2000

File Number 1345.5

High-Frequency NPN Transistor Array For

Low-Power Applications at Frequencies

Up to 1.5GHz

Features

• Gain-Bandwidth Product (f ) . . . . . . . . . . . . . . . . . >3GHz

• Five Transistors on a Common Substrate

The CA3227 consists of ﬁve general purpose silicon NPN

transistors on a common monolithic substrate. Each of the

Applications

transistors exhibits a value of f in excess of 3GHz, making

• VHF Ampliﬁers

them useful from DC to 1.5GHz. The monolithic construction

of these devices provides close electrical and thermal

matching of the ﬁve transistors.

• VHF Mixers

• Multifunction Combinations - RF/Mixer/Oscillator

• IF Converter

Ordering Information

• IF Ampliﬁers

PART

NUMBER

(BRAND)

TEMP.

• Sense Ampliﬁers

RANGE ( C)

-55 to 125

PACKAGE

16 Ld PDIP

16 Ld SOIC

PKG. NO.

E16.3

M16.15

• Synthesizers

CA3227E

• Synchronous Detectors

• Cascade Ampliﬁers

CA3227M

(3227)

CA3227M96

(3227)

-55 to 125

16 Ld SOIC Tape M16.15

and Reel

Pinout

CA3227

(PDIP, SOIC)

TOP VIEW

SUBSTRATE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

12 3 4 5 6 7

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