CHIP RESISTOR
项目 Items
Y5V(F)、Z5U(E)
X7R(B)
COG(CG)、NPO(N)
容量
Capacitance
10pF~4.7nF
2200pF~1.0μF
100pF~0.22μF
容量误差
Capacitance Tolerance
K=±10%
M=±20%
+80%
-20%
+80%
-20%
S=
K=±10% M=±20%
M=±20%
S=
额定电压
Rated Voltage
16VDC , 25 VDC , 50VDC
16VDC ,25 VDC ,50VDC
25VDC , 50VD C
D.F≤0.15%
C≥50pF
D.F≤2.5%(50V)
D.F≤3.5%(16V,25V)
损耗正切
Dissipation
D、F 5.0%
≤
-
4
D.F
≤15%(150Cr+7)×10
C<50pF
温度快速变化
Rapid Change of
Temperature
ΔC/C:≤5%或1PF取最大者
ΔC/C:≤20%
ΔC/C:≤30%
≤30%
≤5% or 1PF take greater one
≤5%或1PF取最大者
ΔC/C
≤20%
ΔC/C
ΔC/C
≤5% or 1PF take greater one
稳态湿热
Damp Heat,Steady State
≤2倍初始标准
D.F
≤2倍初始标准
≤2times of initial standard
≤2倍初始标准
≤2times of initial standard
D.F
D.F
≤2times of initial standard
介质
△C/C
Dielectric
Y5V(F)
ΔC/C:≤5%或1PF取最大者
≤5%or1PF take greater one
△C/C:±20%
温度特性
T.C Characieristics
+22~-82%
+22~-56%
按绝缘电阻要求
Z5U(E)
≤5%或1PF取最大者
≤30%
ΔC/C
ΔC/C
≤20%
ΔC/C
≤5%or1PF take greater one
耐久性
Endurance
≤2倍初始标准
≤2倍初始标准
≤2times of initial standard
≤2倍初始标准
≤2times of initial standard
D.F
D.F
D.F
≤2times of initial standard
无可见损伤
外观
无可见损伤
No visible damage
无可见损伤
No visible damage
外观
Appearance
外观
Appearance
Appearance
No visible damage
施加500VDC,绝缘阻抗大于100MΩ.
The insulation resistance greater than 100M
包封绝缘阻抗
Coating insulaton resistance
Ω
on applying 500VDC voltage.
施加额定值2.5倍电压持续5秒,无可见损伤或击穿现象.
Apply 2.5 rating voltage for 5 seconds,there shall be no evidence of damage or
flash over duringthe test.
耐电压
Voltage Proof
×
施加500VDC,保持1分钟,无弧光、无燃烧及本体被击穿现象.
here shall be no flash,no extingwishing and dielectric coating breakdown on applying
500v DC for one minute.
包封绝缘耐电压
Coating dielectric with
standing voltage
T
在260±5℃的焊料槽内浸入时间2±0.5秒,上锡面积≥95%.
the capccitors are completely immersed in the mothen rosin for 2±0.5 with a
可焊性
Solderability
temperature of 260
±5 ℃,wetsing area ≥95%.
使用溶剂:异丙醇;溶剂温度:(23±2)℃;
浸泡时间:(10±1)h
Solvent: isopropyl alcohol; solvent temperature:
耐溶剂
Component Solvent
Resistance
(23±2)
℃
; soaking time: (10
±
1)h
3