Datasheet > C67078-S1309-A2

C67078-S1309-A2

更新时间： 2024-01-10 17:21:19

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
9页	184K
描述
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

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数据手册

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C67078-S1309-A2 数据手册

BUZ 80

SIPMOS Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

Pin 1

Pin 2

Pin 3

Type

Package

Ordering Code

DS(on)

Ω

BUZ 80

800 V

3.1 A

TO-220 AB

C67078-S1309-A2

Maximum Ratings

Parameter

Symbol

Values

Unit

Continuous drain current

T = 28 °C

3.1

Pulsed drain current

Dpuls

T = 25 °C

12.5

3.1

Avalanche current,limited by T

jmax

Avalanche energy,periodic limited by T

Avalanche energy, single pulse

jmax

Ω

I = 3.1 A, V = 50 V, R = 25

L = 62.4 mH, T = 25 °C

320

Gate source voltage

Power dissipation

tot

T = 25 °C

100

Operating temperature

Storage temperature

-55 ... + 150 °C

-55 ... + 150

stg

≤

Thermal resistance, chip case

1.25

K/W

thJC

Thermal resistance, chip to ambient

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

thJA

55 / 150 / 56

Semiconductor Group

09/96

12 3 4 5 6 7...9

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