Datasheet > C67078-S1329-A2

C67078-S1329-A2

更新时间： 2024-01-03 17:20:12

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
9页	133K
描述
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)

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数据手册

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C67078-S1329-A2 数据手册

BUZ 10 L

Not for new design

SIPMOS Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

• Logic Level

Pin 1

Pin 2

Pin 3

Type

Package

Ordering Code

DS(on)

Ω

BUZ 10 L

50 V

23 A

0.07

TO-220 AB

C67078-S1329-A2

Maximum Ratings

Parameter

Symbol

Values

Unit

Continuous drain current

T = 26 °C

Pulsed drain current

Dpuls

T = 25 °C

1.3

Avalanche current,limited by T

jmax

Avalanche energy,periodic limited by T

Avalanche energy, single pulse

jmax

Ω

I = 23 A, V = 25 V, R = 25

L = 15.1 µH, T = 25 °C

Gate source voltage

± 14

Gate-source peak voltage,aperiodic

Power dissipation

tot

T = 25 °C

Operating temperature

-55 ... + 150 °C

-55 ... + 150

Storage temperature

stg

Thermal resistance, chip case

Thermal resistance, chip to ambient

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

≤ 1.67

K/W

thJC

≤

thJA

55 / 150 / 56

Semiconductor Group

07/96

12 3 4 5 6 7...9

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