Datasheet > C67078-A4674-A001

C67078-A4674-A001

更新时间： 2024-01-10 06:50:39

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
4页	66K
描述
IGBT Chip in NPT-technology

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C67078-A4674-A001 数据手册

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SIGC25T120C

IGBT Chip in NPT-technology

FEATURES:

1200V NPT technology

200µm chip

positive temperature coefficient

easy paralleling

This chip is used for:

BUP 213

Applications:

drives

Chip Type

SIGC25T120C

V_CE

I_Cn

Die Size

Package

Ordering Code

C67078-A4674-

A001

1200V 15A

5.71 x 4.53 mm²

sawn on foil

MECHANICAL PARAMETER:

mm²

Raster size

5.71 x 4.53

Emitter pad size

Gate pad size

2 x ( 2.18 x 1.6 )

1.09 x 0.68

25.9 / 18.7

180

Area total / active

Thickness

µm

grd

Wafer size

150

Flat position

270

Max.possible chips per wafer

Passivation frontside

Emitter metallization

555 pcs

Photoimide

3200 nm Al Si 1%

1400 nm Ni Ag –system

suitable for epoxy and soft solder die bonding

Collector metallization

Die bond

electrically conductive glue or solder

Wire bond

Al, <500µm

Reject Ink Dot Size

Æ 0.65mm ; max 1.2mm

store in original container, in dry nitrogen,

< 6 month at an ambient temperature of 23°C

Recommended Storage Environment

Edited by INFINEON Technologies AI PS DD HV3, L 7141-M, Edition 2, 03.09.2003

12 3 4

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