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C67076-A2508-A67 PDF预览

C67076-A2508-A67

更新时间: 2022-12-11 23:28:13
品牌 Logo 应用领域
英飞凌 - INFINEON 电源电路二极管双极性晶体管
页数 文件大小 规格书
9页 125K
描述
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes

C67076-A2508-A67 数据手册

 浏览型号C67076-A2508-A67的Datasheet PDF文件第2页浏览型号C67076-A2508-A67的Datasheet PDF文件第3页浏览型号C67076-A2508-A67的Datasheet PDF文件第4页浏览型号C67076-A2508-A67的Datasheet PDF文件第5页浏览型号C67076-A2508-A67的Datasheet PDF文件第6页浏览型号C67076-A2508-A67的Datasheet PDF文件第7页 
BSM 10 GD 60 DN2  
IGBT Power Module  
• Power module  
• 3-phase full-bridge  
• Including fast free-wheel diodes  
• Package with insulated metal base plate  
Type  
V
I
Package  
Ordering Code  
CE  
C
BSM 10 GD 60 DN2  
600V 10A  
ECONOPACK 1  
C67076-A2508-A67  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Collector-emitter voltage  
Collector-gate voltage  
V
V
600  
V
CE  
CGR  
R
= 20 k  
600  
GE  
Gate-emitter voltage  
DC collector current  
V
± 20  
GE  
I
A
C
T = 40 °C  
10  
20  
C
Pulsed collector current, t = 1 ms  
I
p
Cpuls  
T = 40 °C  
C
Power dissipation per IGBT  
P
W
tot  
T = 25 °C  
35  
C
Chip temperature  
T
+ 125  
°C  
j
Storage temperature  
T
-55 ... + 150  
stg  
Thermal resistance, chip case  
Diode thermal resistance, chip case  
Insulation test voltage, t = 1min.  
Creepage distance  
R
R
3.5  
K/W  
thJC  
thJCD  
is  
4.5  
V
-
2500  
Vac  
mm  
12  
Clearance  
-
10  
DIN humidity category, DIN 40 040  
IEC climatic category, DIN IEC 68-1  
-
F
sec  
-
40 / 125 / 56  
Semiconductor Group  
1
Jan-09-1997  

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