Datasheet > C67078-A1307-A4

C67078-A1307-A4

更新时间： 2022-12-11 23:28:16

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
9页	202K
描述
SIPMOS Power Transistor (N channel Enhancement mode)

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数据手册

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C67078-A1307-A4 数据手册

BUZ 50 B

SIPMOS Power Transistor

• N channel

• Enhancement mode

Pin 1

Pin 2

Pin 3

Type

)

DS(on

Package

Ordering Code

BUZ 50 B

1000 V

2 A

8 Ω

TO-220 AB

C67078-A1307-A4

Maximum Ratings

Parameter

Symbol

Values

Unit

Drain source voltage

Drain-gate voltage

1000

DGR

Ω

= 20 k

1000

Continuous drain current

T = 25 °C

Pulsed drain current

Dpuls

T = 25 °C

Gate source voltage

Power dissipation

± 20

tot

T = 25 °C

Operating temperature

Storage temperature

-55 ... ...+ 150 °C

-55 ... ...+ 150

stg

≤

Thermal resistance, chip case

1.6

K/W

thJC

Thermal resistance, chip to ambient

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

thJA

55 / 150 / 56

Semiconductor Group

07/96

12 3 4 5 6 7...9

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