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C5296 PDF预览

C5296

更新时间: 2024-10-28 07:08:03
品牌 Logo 应用领域
其他 - ETC 显示器输出应用
页数 文件大小 规格书
4页 102K
描述
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

C5296 数据手册

 浏览型号C5296的Datasheet PDF文件第2页浏览型号C5296的Datasheet PDF文件第3页浏览型号C5296的Datasheet PDF文件第4页 
Ordering number:ENN5290A  
NPN Triple Diffused Planar Silicon Transistor  
2SC5296  
Ultrahigh-Definition CRT Display  
Horizontal Deflection Output Applications  
Features  
Package Dimensions  
unit:mm  
· High speed : t =100ns typ.  
f
· High breakdown voltage : V  
· High reliability (Adoption of HVP process).  
· Adoption of MBIT process.  
=1500V.  
CBO  
2039D  
[2SC5296]  
16.0  
5.6  
3.4  
3.1  
· On-chip damper diode.  
2.8  
2.0  
2.0  
1.0  
0.6  
1 : Base  
1
2
3
2 : Collector  
3 : Emitter  
5.45  
5.45  
SANYO : TO-3PML  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Collector-to-Base Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
1500  
800  
6
V
V
CBO  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
CEO  
V
V
EBO  
I
8
A
C
Collector Current (Pulse)  
Collector Dissipation  
I
16  
A
CP  
P
3.0  
60  
W
W
˚C  
˚C  
C
Tc=25˚C  
Junction Temperature  
Storage Temperature  
Tj  
150  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Collector Cutoff Current  
Symbol  
Conditions  
Unit  
min  
max  
10  
I
V
V
=800V, I =0  
µA  
mA  
V
CBO  
CB  
CE  
E
I
=1500V, R =0  
BE  
1.0  
CES  
Collector-to-Emitter Sustain Voltage  
Emitter Cutoff Current  
V
I
=100mA, I =0  
C B  
800  
40  
CEO(sus)  
I
V
=4V, I =0  
130  
5
mA  
V
EBO  
EB  
C
Collector-to-Emitter Saturation Voltage  
V
I
=5A, I =1.25A  
CE(sat)  
BE(sat)  
C
C
B
Base-to-Emitter Saturation Voltage  
V
I
=5A, I =1.25A  
B
1.5  
V
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Company  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
O1899TS (KT)/11696YK (KOTO) TA-0585 No.5290–1/4  

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