C50BR

更新时间： 2024-02-06 05:20:33

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C50BR 数据手册

WTE

PO WER SEMICONDUCTORS

C50A – C50M

50A AUTOMOTIVE RECTIFIER CELL

Features

Diffused Junction

Low Leakage

Low Cost

High Surge Current Capability

Die Size 220 mil HEX

Mechanical Data

Case: Protected with Silicon Rubber

Terminal: Slug, Cu with Ag Plated

Polarity: Indicated by Large Slug

On Cathode Side

C50

Dim

Min

—

Max

7.23

6.55

—

Mounting Position: Any

0.75

1.0

—

2.2

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

C50A C50B C50D C50G C50J C50K C50M

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

200

140

400

600

420

800

560

1000

700

RMS Reverse Voltage

V^R(RMS)

I^O

280

Average Rectified Output Current

@T_C= 150°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

FSM

500

Forward Voltage

@I_F= 100A

V^FM

I^RM

1.08

3.0

Peak Reverse Current

At Rated DC Blocking Voltage

µA

@T_A= 25°C

Typical Thermal Resistance Junction to Ambient

Operating and Storage Temperature Range

R^ꢀ^JA

K/W

°C

T^J, T^STG

-40 to +150

*Glass passivated forms are available upon request

C50A – C50M

1 of 2

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