Datasheet > C50KR

C50KR

更新时间： 2024-09-26 19:25:35

品牌	Logo	应用领域
WTE		二极管
页数	文件大小	规格书
2页	40K
描述
Rectifier Diode, 1 Phase, 1 Element, 50A, 800V V(RRM), Silicon,

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中文翻译

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C50KR 数据手册

WTE

POWER SEMICONDUCTORS

C50A – C50K

50A AUTOMOTIVE CELL DIODE

Features

ꢀ

Diffused Junction

ꢀ

Low Leakage

Low Cost

High Surge Current Capability

Die Size 220 mil HEX

Anode +

Mechanical Data

C50

Dim

Min

—

Max

7.55

6.55

—

ꢀ

Case: Cell Diode Passivated with Silicon Rubber

Terminal: Copper Disc with Ag Plated

Polarity: Indicated by Large Disc On Cathode

Side, Add “R” Suffix to Indicate Reverse Polarity,

i.e. C50AR

Mounting Position: Any

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 2

—

0.75

1.0

—

2.2

ꢀ

All Dimensions in mm

Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

C50A

C50B

100

C50D

200

C50G

400

C50J

600

C50K

800

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

RMS Reverse Voltage

VR(RMS)

140

280

420

560

Average Rectified Output Current

@T_C= 150°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

500

Forward Voltage

@I_F= 100A

VFM

I^RM

1.08

3.0

Peak Reverse Current

At Rated DC Blocking Voltage

µA

@T_A= 25°C

Typical Thermal Resistance Junction to Ambient

Operating and Storage Temperature Range

RθJA

1.0

°C/W

°C

TJ, TSTG

-40 to +150

C50A – C50K

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