Datasheet > C50D

C50D

更新时间： 2023-12-06 20:00:18

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WON-TOP		二极管
页数	文件大小	规格书
2页	28K
描述
Cell Diodes

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数据手册

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C50D 数据手册

C50A – C50K

50A AUTOMOTIVE CELL DIODE

WON-TOP ELECTRONICS

Features



Diffused Junction



Low Leakage

Low Cost

High Surge Current Capability

Die Size 220 mil HEX

Anode +

Mechanical Data

C50

Dim

Min

—

Max

7.55

6.55

—



Case: Cell Diode Passivated with Silicon Rubber

Terminal: Copper Disc with Ag Plated

Polarity: Indicated by Large Disc On Cathode

Side, Add “R” Suffix to Indicate Reverse Polarity,

i.e. C50AR

—

0.75

1.0

—

2.2



Mounting Position: Any

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 2

All Dimensions in mm

Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

C50A

C50B

100

C50D

200

C50G

400

C50J

600

C50K

800

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

RMS Reverse Voltage

VR(RMS)

140

280

420

560

Average Rectified Output Current

@T_C= 150°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single Half Sine-Wave Superimposed on

Rated Load (JEDEC Method)

IFSM

500

Forward Voltage

@I_F= 100A

VFM

IRM

1.08

3.0

Peak Reverse Current

At Rated DC Blocking Voltage

µA

@T_A= 25°C

Typical Thermal Resistance Junction to Ambient

Operating and Storage Temperature Range

RθJA

1.0

°C/W

°C

TJ, TSTG

-40 to +150

Revision: April, 2012

www.wontop.com

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