Document Number: MRFX035H
Rev. 0, 12/2018
NXP Semiconductors
Technical Data
RF Power LDMOS Transistor
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFET
MRFX035H
This high ruggedness device is designed for use in high VSWR industrial,
medical, broadcast, aerospace and mobile radio applications. Its unmatched
input and output design supports frequency use from 1.8 to 512 MHz.
1.8–512 MHz, 35 W CW, 65 V
WIDEBAND
RF POWER LDMOS TRANSISTOR
Typical Performance: VDD = 65 Vdc
P
(W)
Frequency
(MHz)
G
(dB)
D
(%)
out
ps
Signal Type
(1,2)
1.8–54
CW
CW
CW
32 CW
26 CW
35 CW
24.1
15.1
24.8
58.1
42.3
75.8
(2)
30–400
(3)
230
Load Mismatch/Ruggedness
Frequency
P
Test
in
(MHz)
Signal Type
VSWR
(dBm)
Voltage
Result
NI--360H--2SB
(3)
230
CW
> 65:1
at all Phase
Angles
23.5
(3 dB
Overdrive)
65
No Device
Degradation
1. Measured in 1.8–54 MHz broadband reference circuit (page 5).
2. The values shown are the minimum measured performance numbers across the
indicated frequency range.
3. Measured in 230 MHz production test fixture (page 10).
Gate
Drain
1
2
Features
Unmatched input and output allowing wide frequency range utilization
50 ohm native output impedance
Qualified up to a maximum of 65 VDD operation
Characterized from 30 to 65 V for extended power range
High breakdown voltage for enhanced reliability
Suitable for linear application with appropriate biasing
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
Integrated ESD protection with greater negative gate--source voltage
range for improved Class C operation
Included in NXP product longevity program with assured supply for a
minimum of 15 years after launch
Typical Applications
Industrial, scientific, medical (ISM)
– Laser generation
– Plasma generation
– Particle accelerators
– MRI, RF ablation and skin treatment
– Industrial heating, welding and drying systems
Radio and VHF TV broadcast
Aerospace
– HF communications
– Radar
Mobile radio
– HF and VHF communications
– PMR base stations
2018 NXP B.V.
MRFX035H
RF Device Data
NXP Semiconductors
1