5秒后页面跳转
C3216NP02A223J160AA PDF预览

C3216NP02A223J160AA

更新时间: 2024-11-07 01:16:59
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
16页 489K
描述
RF Power LDMOS Transistor

C3216NP02A223J160AA 数据手册

 浏览型号C3216NP02A223J160AA的Datasheet PDF文件第2页浏览型号C3216NP02A223J160AA的Datasheet PDF文件第3页浏览型号C3216NP02A223J160AA的Datasheet PDF文件第4页浏览型号C3216NP02A223J160AA的Datasheet PDF文件第5页浏览型号C3216NP02A223J160AA的Datasheet PDF文件第6页浏览型号C3216NP02A223J160AA的Datasheet PDF文件第7页 
Document Number: MRFX035H  
Rev. 0, 12/2018  
NXP Semiconductors  
Technical Data  
RF Power LDMOS Transistor  
High Ruggedness N--Channel  
Enhancement--Mode Lateral MOSFET  
MRFX035H  
This high ruggedness device is designed for use in high VSWR industrial,  
medical, broadcast, aerospace and mobile radio applications. Its unmatched  
input and output design supports frequency use from 1.8 to 512 MHz.  
1.8–512 MHz, 35 W CW, 65 V  
WIDEBAND  
RF POWER LDMOS TRANSISTOR  
Typical Performance: VDD = 65 Vdc  
P
(W)  
Frequency  
(MHz)  
G
(dB)  
D
(%)  
out  
ps  
Signal Type  
(1,2)  
1.8–54  
CW  
CW  
CW  
32 CW  
26 CW  
35 CW  
24.1  
15.1  
24.8  
58.1  
42.3  
75.8  
(2)  
30–400  
(3)  
230  
Load Mismatch/Ruggedness  
Frequency  
P
Test  
in  
(MHz)  
Signal Type  
VSWR  
(dBm)  
Voltage  
Result  
NI--360H--2SB  
(3)  
230  
CW  
> 65:1  
at all Phase  
Angles  
23.5  
(3 dB  
Overdrive)  
65  
No Device  
Degradation  
1. Measured in 1.8–54 MHz broadband reference circuit (page 5).  
2. The values shown are the minimum measured performance numbers across the  
indicated frequency range.  
3. Measured in 230 MHz production test fixture (page 10).  
Gate  
Drain  
1
2
Features  
Unmatched input and output allowing wide frequency range utilization  
50 ohm native output impedance  
Qualified up to a maximum of 65 VDD operation  
Characterized from 30 to 65 V for extended power range  
High breakdown voltage for enhanced reliability  
Suitable for linear application with appropriate biasing  
(Top View)  
Note: The backside of the package is the  
source terminal for the transistor.  
Figure 1. Pin Connections  
Integrated ESD protection with greater negative gate--source voltage  
range for improved Class C operation  
Included in NXP product longevity program with assured supply for a  
minimum of 15 years after launch  
Typical Applications  
Industrial, scientific, medical (ISM)  
– Laser generation  
– Plasma generation  
– Particle accelerators  
– MRI, RF ablation and skin treatment  
– Industrial heating, welding and drying systems  
Radio and VHF TV broadcast  
Aerospace  
– HF communications  
– Radar  
Mobile radio  
– HF and VHF communications  
– PMR base stations  
2018 NXP B.V.  

与C3216NP02A223J160AA相关器件

型号 品牌 获取价格 描述 数据表
C3216NP02A333J160AA TDK

获取价格

Ceramic Capacitor, Multilayer, Ceramic, 100V, NP0, -/+30ppm/Cel TC, 0.033uF, 1206
C3216NP02A392J060AA TDK

获取价格

Commercial Grade ( High Temperature Application )
C3216NP02A472J085AA TDK

获取价格

Commercial Grade ( High Temperature Application )
C3216NP02A562J085AA TDK

获取价格

Commercial Grade ( High Temperature Application )
C3216NP02A682J115AA TDK

获取价格

Commercial Grade ( High Temperature Application )
C3216NP02A822J115AA TDK

获取价格

Commercial Grade ( High Temperature Application )
C3216NP02E103J115AA TDK

获取价格

Commercial Grade ( Mid Voltage (100 to 630V) )
C3216NP02E153J160AA TDK

获取价格

积层贴片陶瓷片式电容器
C3216NP02E223J160AA TDK

获取价格

Commercial Grade ( Mid Voltage (100 to 630V) )
C3216NP02J103G160AA TDK

获取价格

Capacitance=10nFEdc=630VT.C.=NP0