Datasheet > C3216C0G2A104J160AE

C3216C0G2A104J160AE

更新时间： 2024-11-06 01:16:59

品牌	Logo	应用领域
恩智浦 - NXP		电容器
页数	文件大小	规格书
16页	489K
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RF Power LDMOS Transistor

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Document Number: MRFX035H

Rev. 0, 12/2018

NXP Semiconductors

Technical Data

RF Power LDMOS Transistor

High Ruggedness N--Channel

Enhancement--Mode Lateral MOSFET

MRFX035H

This high ruggedness device is designed for use in high VSWR industrial,

medical, broadcast, aerospace and mobile radio applications. Its unmatched

input and output design supports frequency use from 1.8 to 512 MHz.

1.8–512 MHz, 35 W CW, 65 V

WIDEBAND

RF POWER LDMOS TRANSISTOR

Typical Performance: V_DD= 65 Vdc

(W)

Frequency

(MHz)

(dB)



(%)

out

Signal Type

(1,2)

1.8–54

32 CW

26 CW

35 CW

24.1

15.1

24.8

58.1

42.3

75.8

(2)

30–400

(3)

230

Load Mismatch/Ruggedness

Frequency

Test

(MHz)

Signal Type

VSWR

(dBm)

Voltage

Result

NI--360H--2SB

(3)

230

> 65:1

at all Phase

Angles

23.5

(3 dB

Overdrive)

No Device

Degradation

1. Measured in 1.8–54 MHz broadband reference circuit (page 5).

2. The values shown are the minimum measured performance numbers across the

indicated frequency range.

3. Measured in 230 MHz production test fixture (page 10).

Gate

Drain

Features



Unmatched input and output allowing wide frequency range utilization

50 ohm native output impedance

Qualified up to a maximum of 65 V_DDoperation

Characterized from 30 to 65 V for extended power range

High breakdown voltage for enhanced reliability

Suitable for linear application with appropriate biasing

(Top View)

Note: The backside of the package is the

source terminal for the transistor.

Figure 1. Pin Connections

Integrated ESD protection with greater negative gate--source voltage

range for improved Class C operation



Included in NXP product longevity program with assured supply for a

minimum of 15 years after launch

Typical Applications



Industrial, scientific, medical (ISM)

– Laser generation

– Plasma generation

– Particle accelerators

– MRI, RF ablation and skin treatment

– Industrial heating, welding and drying systems

Radio and VHF TV broadcast

Aerospace



– HF communications

– Radar



Mobile radio

– HF and VHF communications

– PMR base stations

 2018 NXP B.V.

MRFX035H

RF Device Data

NXP Semiconductors

12 3 4 5 6 7...16

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