Datasheet > C30619

C30619

更新时间： 2024-10-28 22:28:11

品牌	Logo	应用领域
珀金埃尔默 - PERKINELMER		光电二极管光电二极管
页数	文件大小	规格书
5页	150K
描述
Large-Area InGaAs Photodiodes

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C30619 数据手册

Description

Large-Area InGaAs

Photodiodes

The PerkinElmer family of large-area InGaAs

PIN photodiodes provide high responsivity

from 800 nm to 1700 nm for applications

including optical power meters, fiber optic test

equipment, near-IR spectoscopy and

instrumentation. All devices are planar

passivated and feature low capacitance for

extended bandwidth, and high shunt

EVERYTHING

IN A

C30619, C30641, C30642, C30665

NEW

LIGHT.

resistance for maximum sensitivity. Typical

devices feature <1% non-linearity to optical

powers >+13 dBm (20 mW), and uniformity

within 2% across the detector active area.

Typical responsivity of 0.2 A/W at 850 nm for

our large-area InGaAs devices allows use of

a single detector in fiber optic test

instrumentation designed to operate at 850,

1300, and 1550 nm.

Features

Devices are available with active areas from

0.5 mm to 3.0 mm in TO-type packages or on

thermoelectric coolers for increased sensitivity

(see below). Photodiodes can also be

mounted on customized ceramic sub-mounts

to suit specific application requirements.

PerkinElmer Optoelectronics Canada is

qualified to ISO-9001 and operates to MIL-Q-

9858A and AQAP-1 quality standards. All

devices undergo extended life-test and

periodic process qualification programs to

assure high reliability. In addition, all

•0.5, 1.0, 2.0, and 3.0 m m diam eters

•High responsivity from 850 nm to 1550 nm

•High shunt resistance, low dark current

•TE-cooled package options

•Low capacitance for fast response tim es

Applications

•Power m eters

•Fiber identifiers

•Laser burn-in racks

•Near infrared instrum entation

•F.T.I.R. spectroscopy

production devices are sourced from a

qualified wafer, screened with a 16 hour,

200°C burn-in at -10V bias (C30619 and

C30641) or -5V (C30642 and C30665), and

tested to meet responsivity, spectral noise,

capacitance, shunt resistance and dark

current specifications.

12 3 4 5

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