Datasheet > C2D05120E

C2D05120E

更新时间： 2024-10-29 01:24:43

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
6页	391K
描述
Silicon Carbide Schottky Diode Zero Recovery Rectifier

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中文翻译

获取价格

数据手册

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C2D05120E 数据手册

C2D05120E

V_RRM

1200 V

Silicon Carbide Schottky Diode

I_F(T_C=135˚C) =ꢀꢀ8.5ꢀA

Q_cꢀ ꢀꢀ ꢀꢀꢀ=ꢀꢀ ꢀꢀꢀ28ꢀnC

Zero recovery^®RectifieR

Features

Package

•ꢀ 1.2kVꢀSchottkyꢀRectiﬁer

•ꢀ ZeroꢀReverseꢀRecoveryꢀCurrent

•ꢀ ZeroꢀForwardꢀRecoveryꢀVoltage

•ꢀ High-FrequencyꢀOperation

•ꢀ Temperature-IndependentꢀSwitchingꢀBehavior

•ꢀ ExtremelyꢀFastꢀSwitching

•ꢀ PositiveꢀTemperatureꢀCoefﬁcientꢀonꢀV_F

ꢀꢀꢀꢀꢀꢀTO-252-2

Beneﬁts

•ꢀ ReplaceꢀBipolarꢀwithꢀUnipolarꢀRectiﬁers

•ꢀ EssentiallyꢀNoꢀSwitchingꢀLosses

•ꢀ HigherꢀEfﬁciency

PINꢀ1

PINꢀ2

CASE

•ꢀ ReductionꢀofꢀHeatꢀSinkꢀRequirements

•ꢀ ParallelꢀDevicesꢀWithoutꢀThermalꢀRunaway

Applications

Part Number

C2D05120E

Package

Marking

•ꢀ SwitchꢀModeꢀPowerꢀSuppliesꢀ

•ꢀ PowerꢀFactorꢀCorrection

•ꢀ MotorꢀDrives

ꢀ

TO-252-2

C2D05120

•ꢀ HighꢀVoltageꢀMultipliers

Maximum Ratings (T_C=25°Cꢀunlessꢀotherwiseꢀspeciﬁed)

Symbol

Parameter

RepetitiveꢀPeakꢀReverseꢀVoltage

SurgeꢀPeakꢀReverseꢀVoltage

DCꢀBlockingꢀVoltage

Value Unit

Test Conditions

Note

V_RRM

1200

V_RSM

V_DC

17.5

8.5

T_C=25˚C

T_C=135˚C

T_C=157˚C

I_F

ContinuousꢀForwardꢀCurrentꢀꢀ

I_FRM

RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent

Non-RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent

PowerꢀDissipation

T_C=25˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀWave

T_C=25˚C,ꢀt_P=10ꢀµs,ꢀPulse

I_FSM

100

136

T_C=25˚C

T_C=110˚C

P_tot

˚C

-55ꢀtoꢀ

+175

T_Jꢀ,ꢀT_stg

OperatingꢀJunctionꢀandꢀStorageꢀTemperature

C2D05120E Rev. B

12 3 4 5 6

中文翻译

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