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C2714

更新时间: 2024-11-08 12:55:39
品牌 Logo 应用领域
永而佳 - WINNERJOIN 晶体晶体管
页数 文件大小 规格书
1页 70K
描述
NPN EPITAXIAL SILICON TRANSISTOR

C2714 数据手册

  
RoHS  
2SC2714  
NP N EP ITAXIAL S ILICON TRANS IS TOR  
AM/FM IF AMPLIFIER,LOCAL OSCILIATOR  
OF FM/VHF TUNER  
*
High Current Gain Bandwidth Product fT=1100MHz  
1.  
1.BASE  
ABSOLUTE MAXIMUM RATINGS at Ta=25  
2.EMITTER  
2.4  
1.3  
3.COLLECTOR  
Characteristic  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Symbol  
Vcbo  
Vceo  
Vebo  
Ic  
Rating  
40  
Unit  
V
30  
V
4.0  
V
Unit:mm  
20  
mA  
mW  
Collector Dissipation Ta=25  
*
PD  
100  
Junction Temperature  
Storage Temperature  
Tj  
150  
Tstg  
-55-150  
ELECTRICAL CHARACTERISTICS at Ta=25  
Characteristic  
Symbol Min Typ Max Unit  
Test Conditions  
Collector-Base Breakdown Voltage  
Bvcbo  
Bvceo  
40  
30  
V
V
Ic=100uA Ie=0  
Ic= 1mA Ib=0  
Collector-Emitter  
Voltage#  
Breakdown  
Emitter-Base Breakdown Voltage  
Collector-Base Cutoff Current  
Emitter-Base Cutoff Current  
DC Current Gain  
Bvebo  
Icbo  
Iebo  
Hfe  
4.0  
40  
V
Ie= 100uA Ic=0  
Vcb= 18V Ie=0  
Veb= 4V Ic= 0  
500  
500  
200  
0.40  
1.7  
nA  
nA  
Vce= 6V Ic= 1mA  
Ic= 10mA Ib= 1mA  
Vcb=10V Ie=0 f=1MHZ  
Collector-Emitter Saturation Voltage Vce(sat)  
V
Collector-Base Capacitance  
Cob  
fT  
1.3  
PF  
Current Gain-Bandwidth Product  
550  
MHz Vce= 6V Ic= 1mA  
*
Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25  
Pulse Test : Pulse Width 300uS,Duty cycle 2%  
.
#
WEJ ELECTRONIC CO.,LTD  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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