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C122D1-A PDF预览

C122D1-A

更新时间: 2024-11-05 13:06:15
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 可控硅整流器
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3页 69K
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C122D1-A 数据手册

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SEMICONDUCTOR TECHNICAL DATA  
Reverse Blocking Triode Thyristors  
. . . designed primarily for full-wave ac control applications, such as motor controls,  
heating controls and power supplies; or wherever half-wave silicon gate-controlled,  
solid-state devices are needed.  
SCRs  
8 AMPERES RMS  
50 thru 800 VOLTS  
Glass Passivated Junctions and Center Gate Fire for Greater Parameter  
Uniformity and Stability  
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat  
Dissipation and Durability  
Blocking Voltage to 800 Volts  
Different Leadform Configurations,  
Suffix (2) thru (6) available, see Leadform Options (Section 4) for Information  
G
A
K
CASE 221A-04  
(TO-220AB)  
STYLE 3  
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
Repetitive Peak Off-State Voltage (T = 25 to 100°C, Gate Open)  
V
DRM  
V
RRM  
Volts  
J
Repetitive Peak Reverse Voltage  
C122F1  
C122A1  
C122B1  
C122D1  
C122M1  
C122N1  
50  
100  
200  
400  
600  
800  
(1)  
Peak Non-repetitive Reverse Voltage  
V
RSM  
Volts  
C122F1  
C122A1  
C122B1  
C122D1  
C122M1  
C122N1  
75  
200  
300  
500  
700  
800  
Forward Current RMS  
(All Conduction Angles)  
T
C
75°C  
I
8
Amps  
Amps  
T(RMS)  
Peak Forward Surge Current  
(1/2 Cycle, Sine Wave, 60 Hz)  
I
90  
34  
TSM  
2
I t  
2
A s  
Circuit Fusing Considerations  
(t = 8.3 ms)  
1. V  
and V  
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, (cont.)  
RRM  
DRM  
positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a  
constant current source such that the voltage ratings of the devices are exceeded.  
36  
Motorola Thyristor Device Data  

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