5秒后页面跳转
C1206C224Z5VAC PDF预览

C1206C224Z5VAC

更新时间: 2024-11-05 12:51:31
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 晶体晶体管功率场效应晶体管射频
页数 文件大小 规格书
19页 1190K
描述
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

C1206C224Z5VAC 数据手册

 浏览型号C1206C224Z5VAC的Datasheet PDF文件第2页浏览型号C1206C224Z5VAC的Datasheet PDF文件第3页浏览型号C1206C224Z5VAC的Datasheet PDF文件第4页浏览型号C1206C224Z5VAC的Datasheet PDF文件第5页浏览型号C1206C224Z5VAC的Datasheet PDF文件第6页浏览型号C1206C224Z5VAC的Datasheet PDF文件第7页 
Document Number: MRF6V2300N  
Rev. 5, 4/2010  
Freescale Semiconductor  
Technical Data  
RF Power Field Effect Transistors  
N--Channel Enhancement--Mode Lateral MOSFETs  
MRF6V2300NR1  
MRF6V2300NBR1  
Designed primarily for CW large--signal output and driver applications with  
frequencies up to 600 MHz. Devices are unmatched and are suitable for use in  
industrial, medical and scientific applications.  
Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA,  
10--600 MHz, 300 W, 50 V  
LATERAL N--CHANNEL  
SINGLE--ENDED  
BROADBAND  
RF POWER MOSFETs  
P
out = 300 Watts, f = 220 MHz  
Power Gain — 25.5 dB  
Drain Efficiency — 68%  
Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 300 Watts CW  
Output Power  
Features  
Characterized with Series Equivalent Large--Signal Impedance Parameters  
CASE 1486--03, STYLE 1  
T O -- 2 7 0 W B -- 4  
Qualified Up to a Maximum of 50 VDD Operation  
Integrated ESD Protection  
PLASTIC  
MRF6V2300NR1  
225°C Capable Plastic Package  
RoHS Compliant  
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.  
CASE 1484--04, STYLE 1  
T O -- 2 7 2 W B -- 4  
PLASTIC  
MRF6V2300NBR1  
PARTS ARE SINGLE--ENDED  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
--0.5, +110  
--0.5, +10  
-- 65 to +150  
150  
Unit  
Vdc  
Vdc  
°C  
RF /V  
in GS  
RF /V  
out DS  
Drain--Source Voltage  
V
DSS  
Gate--Source Voltage  
V
GS  
Storage Temperature Range  
Case Operating Temperature  
Operating Junction Temperature  
T
stg  
RF /V  
in GS  
RF /V  
out DS  
T
C
°C  
(1,2)  
T
J
225  
°C  
(Top View)  
Table 2. Thermal Characteristics  
Characteristic  
Note: Exposed backside of the package is  
the source terminal for the transistor.  
(2,3)  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
Case Temperature 83°C, 300 W CW  
Figure 1. Pin Connections  
R
θ
0.24  
°C/W  
JC  
Table 3. ESD Protection Characteristics  
Test Methodology  
Class  
Human Body Model (per JESD22--A114)  
Machine Model (per EIA/JESD22--A115)  
Charge Device Model (per JESD22--C101)  
2 (Minimum)  
A (Minimum)  
IV (Minimum)  
1. Continuous use at maximum temperature will affect MTTF.  
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access  
MTTF calculators by product.  
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes -- AN1955.  
© Freescale Semiconductor, Inc., 2007--2008, 2010. All rights reserved.  

与C1206C224Z5VAC相关器件

型号 品牌 获取价格 描述 数据表
C1206C224Z5VAC7867 KEMET

获取价格

Ceramic Capacitor, Multilayer, Ceramic, 50V, Y5V, -82/+22ppm/Cel TC, 0.22uF, 1206
C1206C224Z9VAC7800 KEMET

获取价格

Ceramic Capacitor, Multilayer, Ceramic, 6.3V, 80% +Tol, 20% -Tol, Y5V, -82/+22ppm/Cel TC,
C1206C225J1RACAUTO KEMET

获取价格

Surface Mount Multilayer Ceramic Chip Capacitors (SMD MLCCs)
C1206C225J2RACAUTO KEMET

获取价格

Surface Mount Multilayer Ceramic Chip Capacitors (SMD MLCCs)
C1206C225J3RACAUTO KEMET

获取价格

Surface Mount Multilayer Ceramic Chip Capacitors (SMD MLCCs)
C1206C225J4RACAUTO KEMET

获取价格

Surface Mount Multilayer Ceramic Chip Capacitors (SMD MLCCs)
C1206C225J4RAL7025 KEMET

获取价格

Cap,Ceramic,2.2uF,16VDC,5% -Tol,5% +Tol,X7R TC Code,-15,15% TC,1206 Case
C1206C225J4RALTU KEMET

获取价格

Ceramic Capacitor, Multilayer, Ceramic, 16V, X7R, -/+15ppm/Cel TC, 2.2uF, 1206
C1206C225J5RACAUTO KEMET

获取价格

Surface Mount Multilayer Ceramic Chip Capacitors (SMD MLCCs)
C1206C225J5RACTU KEMET

获取价格

Ceramic, SMD Comm X7R, 2.2 uF, 5%, 50 V, 1206, X7R, SMD, MLCC, Temperature Stable, Class I