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C1206C224Z5VAC

更新时间: 2024-11-03 12:51:31
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飞思卡尔 - FREESCALE 晶体晶体管功率场效应晶体管射频
页数 文件大小 规格书
19页 1190K
描述
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

C1206C224Z5VAC 数据手册

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Document Number: MRF6V2300N  
Rev. 5, 4/2010  
Freescale Semiconductor  
Technical Data  
RF Power Field Effect Transistors  
N--Channel Enhancement--Mode Lateral MOSFETs  
MRF6V2300NR1  
MRF6V2300NBR1  
Designed primarily for CW large--signal output and driver applications with  
frequencies up to 600 MHz. Devices are unmatched and are suitable for use in  
industrial, medical and scientific applications.  
Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA,  
10--600 MHz, 300 W, 50 V  
LATERAL N--CHANNEL  
SINGLE--ENDED  
BROADBAND  
RF POWER MOSFETs  
P
out = 300 Watts, f = 220 MHz  
Power Gain — 25.5 dB  
Drain Efficiency — 68%  
Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 300 Watts CW  
Output Power  
Features  
Characterized with Series Equivalent Large--Signal Impedance Parameters  
CASE 1486--03, STYLE 1  
T O -- 2 7 0 W B -- 4  
Qualified Up to a Maximum of 50 VDD Operation  
Integrated ESD Protection  
PLASTIC  
MRF6V2300NR1  
225°C Capable Plastic Package  
RoHS Compliant  
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.  
CASE 1484--04, STYLE 1  
T O -- 2 7 2 W B -- 4  
PLASTIC  
MRF6V2300NBR1  
PARTS ARE SINGLE--ENDED  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
--0.5, +110  
--0.5, +10  
-- 65 to +150  
150  
Unit  
Vdc  
Vdc  
°C  
RF /V  
in GS  
RF /V  
out DS  
Drain--Source Voltage  
V
DSS  
Gate--Source Voltage  
V
GS  
Storage Temperature Range  
Case Operating Temperature  
Operating Junction Temperature  
T
stg  
RF /V  
in GS  
RF /V  
out DS  
T
C
°C  
(1,2)  
T
J
225  
°C  
(Top View)  
Table 2. Thermal Characteristics  
Characteristic  
Note: Exposed backside of the package is  
the source terminal for the transistor.  
(2,3)  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
Case Temperature 83°C, 300 W CW  
Figure 1. Pin Connections  
R
θ
0.24  
°C/W  
JC  
Table 3. ESD Protection Characteristics  
Test Methodology  
Class  
Human Body Model (per JESD22--A114)  
Machine Model (per EIA/JESD22--A115)  
Charge Device Model (per JESD22--C101)  
2 (Minimum)  
A (Minimum)  
IV (Minimum)  
1. Continuous use at maximum temperature will affect MTTF.  
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access  
MTTF calculators by product.  
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes -- AN1955.  
© Freescale Semiconductor, Inc., 2007--2008, 2010. All rights reserved.  

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