Datasheet > C10T04QH-11A

C10T04QH-11A

更新时间： 2022-01-13 05:42:55

品牌	Logo	应用领域
NIEC		肖特基二极管
页数	文件大小	规格书
6页	57K
描述
Schottky Barrier Diode

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数据手册

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C10T04QH-11A 数据手册

SBD T y p e : C10T04QH-11A

OUTLINE DRAWING

FEATURES

*Tabless TO-220

*Dual Diodes – Cathode Common

*Low Forward Voltage Drop

*High Surge Capability

*Tj=150 °C operation

Maximum Ratings

Approx Net Weight: 1.45g

C10T04QH-11A

Rating

Symbol

Unit

Repetitive Peak Reverse Voltage

Repetitive Peak Surge Reverse Voltage

V_RRM

V_RRSM

45(pulse width ≤ 1µs duty ≤ 1/50)

50 Hz Full Sine Wave

Resistive Load

Average Rectified Output Current

RMS Forward Current

I_O

Tc=128°C

I_F(RMS)

I_FSM

11.1

50Hz Full Sine Wave ,1cycle

Non-repetitive

Surge Forward Current

120

Operating JunctionTemperature Range

Storage Temperature Range

T_jw

T_stg

-40 to +150

°C

Electrical • Thermal Characteristics

Characteristics

Peak Reverse Current

Symbol

Conditions

Min. Typ. Max. Unit

Tj= 25°C, V_RM= V_RRM

per arm

I_RM

Tj= 25°C, I_FM= 5 A

per arm

Peak Forward Voltage

Thermal Resistance

V_FM

0.61

Rth₍j-c) Junction to Case

°C /W

12 3 4 5 6

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