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C10T10Q_15 PDF预览

C10T10Q_15

更新时间: 2024-02-26 12:50:32
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美国国家仪器公司 - NI /
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描述
SBD

C10T10Q_15 数据手册

  
10A Avg.  
100 Volts  
SBD  
C10T10Q  
■最大定格ꢀMaximum Ratings  
OUTLINE DRAWING(mm)  
Item  
Symbol  
VRRM  
IO  
Conditions  
100  
Tc=121℃  
11.1  
Unit  
V
Repetitive Peak Reverse Voltage  
50Hz、正弦全波通電抵抗負荷  
50Hz Full Sine Wave Resistive Load  
10  
A
Average Rectified Forward Current  
IF(RMS)  
IFSM  
A
R.M.S. Forward Current  
50Hz正弦全波,1サイクル,非くり返し  
50Hz Full Sine Wave,1cycle, Non-repetitive  
A
120  
Surge Forward Current  
範 囲  
Tjw  
-40~+150  
Operating Junction Temperature Range  
範 囲  
Tstg  
-40~+150  
Storage Temperature Range  
■APPROX. NET WEIGHT:1.4g  
■電気的・熱的特性ꢀElectrical/Thermal Characteristics  
Item  
Symbol  
IRM  
Conditions  
Min.  
Typ. Max. Unit  
一素子あたりꢀ  
,
Per Diode  
Tj=25℃, VRM=VRRM  
1
0.85  
3
mA  
V
Peak Reverse Current  
VFM  
Tj=25℃, IFM=5A, 一素子あたりꢀ  
Per Diode  
Peak Forward Voltage  
接 合 部 ・ ケ ー ス 間  
Junction toCase  
Rth(j-c)  
℃/W  
Thermal Resistance  
■定格・特性曲線  
FIG.1  
FIG.2  
FIG.3  
0˚  
180˚  
θ
通流角  
ꢀ電ꢀ圧ꢀ特ꢀ性  
平ꢀ均ꢀ順 ꢀ電ꢀ力ꢀ損ꢀ失ꢀ特ꢀ性  
AVERAGE FORWARD POWER DISSIPATION  
ピーク逆電流ꢀ-ꢀピーク逆電圧特性  
PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE  
CONDUCTION ANGLE  
FORWARD CURRENT VS. VOLTAGE  
Tj= 150˚C  
C10T10Q/C10T10Q-11A (per Arm)  
C10T10Q/C10T10Q-11A (Total)  
C10T10Q/C10T10Q-11A (per Arm)  
20  
10  
5
20  
10  
5
RECT 180˚  
SINE WAVE  
8
6
4
2
0
2
1
Tj=25˚C  
Tj=150˚C  
(A)  
(mA)  
(W)  
0.5  
2
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0
2
4
6
8
10  
12  
0
20  
40  
60  
80  
100  
120  
INSTANTANEOUS FORWARD VOLTAGE (V)  
AVERAGE FORWARD CURRENT (A)  
PEAK REVERSE VOLTAGE (V)  
瞬ꢀ時ꢀ順 ꢀ電ꢀ圧ꢀ(V)  
平ꢀ均ꢀ順 ꢀ電ꢀ流ꢀ(A)  
ピꢀーꢀクꢀ逆ꢀ電ꢀ圧ꢀ(V)  
FIG.4  
FIG.5  
FIG.6  
0˚  
180˚  
θ
平ꢀ均ꢀ逆ꢀ電ꢀ力ꢀ損ꢀ失  
サꢀーꢀジꢀ順 ꢀ電ꢀ流ꢀ定ꢀ格  
SURGE CURRENT RATINGS  
f=50Hz,Sine Wave,Non-Repetitive,No Load  
平ꢀ均ꢀ順 ꢀ電ꢀ流ꢀ-ꢀケꢀーꢀスꢀ温ꢀ度ꢀ定ꢀ格  
通流角  
AVERAGE REVERSE POWER DISSIPATION  
AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE  
CONDUCTION ANGLE  
C10T10Q/C10T10Q-11A (Total)  
V
RM=100V  
C10T10Q/C10T10Q-11A  
C10T10Q/C10T10Q-11A (Total)  
2.0  
1.6  
1.2  
0.8  
0.4  
0
140  
12  
RECT 180˚  
SINE WAVE  
RECT 180˚  
120  
100  
80  
60  
40  
20  
0
10  
8
SINE WAVE  
6
4
(A)  
(A)  
2
I
FSM  
(W)  
0.02s  
0
0
20  
40  
60  
80  
100  
120  
0
25  
50  
75  
100  
125  
150  
0.02  
0.05  
0.1  
0.2  
0.5  
1
2
REVERSE VOLTAGE (V)  
TIME (s)  
CASE TEMPERATURE (˚C)  
逆ꢀ電ꢀ圧ꢀ(V)  
時ꢀ間ꢀ(s)  
ケꢀーꢀスꢀ温ꢀ度ꢀ(℃)  
FIG.7  
接ꢀ合ꢀ容ꢀ量ꢀ特ꢀ性  
JUNCTION CAPACITANCE VS. REVERSE VOLTAGE  
Tj=25C,Vm=20mVRMS,f=100kHz,Typical Value  
C10T10Q/C10T10Q-11A (per Arm)  
500  
200  
100  
50  
(pF)  
20  
0.5  
1
2
5
10  
20  
50  
100  
200  
REVERSE VOLTAGE (V)  
逆ꢀ電ꢀ圧ꢀ(V)  
505  

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