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C0805C225J4RAC PDF预览

C0805C225J4RAC

更新时间: 2024-11-07 01:06:31
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
16页 497K
描述
Heterojunction Bipolar Transistor Technology (InGaP HBT)

C0805C225J4RAC 数据手册

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Document Number: MMG3014NT1  
Rev. 5, 3/2016  
Freescale Semiconductor  
Technical Data  
Heterojunction Bipolar Transistor  
Technology (InGaP HBT)  
MMG3014NT1  
Broadband High Linearity Amplifier  
The MMG3014NT1 is a general purpose amplifier that is input and output  
internally prematched. It is designed for a broad range of Class A,  
small--signal, high linearity, general purpose applications. It is suitable for  
applications with frequencies from 40 to 4000 MHz such as cellular, PCS,  
BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF.  
40--4000 MHz, 19.5 dB  
25 dBm  
InGaP HBT GPA  
Features  
Frequency: 40--4000 MHz  
P1dB: 25 dBm @ 900 MHz  
Small--Signal Gain: 19.5 dB @ 900 MHz  
Third Order Output Intercept Point: 40.5 dBm @ 900 MHz  
Single 5 V Supply  
Active Bias  
Cost--effective SOT--89 Surface Mount Plastic Package  
In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.  
SOT--89  
Table 1. Typical Performance (1)  
Table 2. Maximum Ratings  
Rating  
Supply Voltage  
Symbol  
Value  
Unit  
V
900 2140 3500  
Symbol MHz MHz MHz Unit  
Characteristic  
V
6
300  
CC  
CC  
Small--Signal Gain  
(S21)  
G
19.5  
-- 2 5  
-- 11  
25  
15  
-- 1 2  
-- 1 3  
10  
dB  
p
Supply Current  
I
mA  
dBm  
C  
RF Input Power  
P
25  
in  
Input Return Loss  
(S11)  
IRL  
ORL  
P1dB  
OIP3  
-- 8  
dB  
Storage Temperature Range  
Junction Temperature  
T
stg  
--65 to +150  
175  
T
J
C  
Output Return Loss  
(S22)  
-- 1 9  
25  
dB  
Power Output @1dB  
Compression  
25.8  
dBm  
dBm  
Third Order Output  
Intercept Point  
40.5 40.5  
40  
1. V = 5 Vdc, T = 25C, 50 ohm system, application circuit  
CC  
A
tuned for specified frequency.  
Table 3. Thermal Characteristics  
(2)  
Characteristic  
Symbol  
Value  
Unit  
C/W  
Thermal Resistance, Junction to Case  
R
27.4  
JC  
Case Temperature 81C, 5 Vdc, 135 mA, no RF applied  
2. Refer to AN1955,Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.  
Freescale Semiconductor, Inc., 2008, 2011, 2014, 2016. All rights reserved.  

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