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C-1450ADFB-E-LAD-NT PDF预览

C-1450ADFB-E-LAD-NT

更新时间: 2024-11-02 14:41:19
品牌 Logo 应用领域
SOURCE 光纤
页数 文件大小 规格书
3页 1069K
描述
DFB Laser Diode Emitter, 1447nm Min, 1453nm Max, Through Hole Mount

C-1450ADFB-E-LAD-NT 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.81主体高度:3.3 mm
主体长度或直径:3.85 mm最长下降时间:0.5 ns
光纤设备类型:DFB LASER DIODE EMITTER安装特点:THROUGH HOLE MOUNT
信道数量:1最高工作温度:70 °C
最低工作温度:最大工作波长:1453 nm
最小工作波长:1447 nm标称工作波长:1450 nm
上升时间:0.5 ns最大供电电压:1.7 V
表面贴装:NO最小阈值电流:20 mA
传输类型:DIGITALBase Number Matches:1

C-1450ADFB-E-LAD-NT 数据手册

 浏览型号C-1450ADFB-E-LAD-NT的Datasheet PDF文件第2页浏览型号C-1450ADFB-E-LAD-NT的Datasheet PDF文件第3页 
1.27um-1.61um MQW-DFB Laser Diodes for CWDM  
C-1XXXA-DFB-E-XX-NT  
Absolute Maximum Rating (Tc=25ºC)  
Parameter  
Symbol  
Po  
Value  
8(CW)  
2
Unit  
mW  
V
Optical Output Power  
LD Reverse Voltage  
LD Forward Current  
PD Reverse Voltage  
PD Forward Current  
Operating Temperature  
Storage Temperature  
VRLD  
IFLD  
150  
mA  
V
VRPD  
15  
IFPD  
2
mA  
ºC  
T
0 to +70  
-40 to +85  
opr  
T
ºC  
stg  
Optical and Electrical Characteristics( Tc=70ºC )  
Parameter  
Threshold Current  
Symbol  
Min  
-
Typical  
Max  
50  
Unit  
mA  
Test Condition  
Ith  
-
CW  
Optical Output Power  
Po  
6
8
-
mW  
CW, I=I +60mA  
th  
Optical and Electrical Characteristics( Tc=25ºC)  
Parameter  
Symbol  
Min  
-
Typical  
Max  
20  
Unit  
mA  
mW  
nm  
dB  
Test Condition  
Threshold Current  
Optical Output Power  
Peak Wavelength*  
Side Mode Suppression Ratio  
Forward Voltage  
Ith  
Po  
λ
-
CW  
3
4
-
CW, I=I +20mA  
th  
n-3  
30  
-
n
n+3  
-
CW,Po=5mW  
CW,Po=5mW (0 to 70ºC)  
CW  
Sr  
35  
-
V
F
1.7  
V
Temperature dependence of  
peak wavelength  
∆λp/∆Τ  
-
0.1  
0.12  
nm/ºC  
CW,Po=5mW (0 to 70ºC)  
Rise/Fall Time  
t / t  
r
-
-
-
0.5  
1
ns  
nm  
µA  
µA  
pF  
I
=I , 20-80%  
f
bias th  
∆λ  
CW,Po=5mW, -20dB  
Spectral Width  
PD Monitor Current  
PD Dark Current  
PD Capacitance  
-
CW,P =5mW, V =5V  
Im  
100  
-
1200  
1.0  
-
RPD  
o
IDARK  
-
-
0.3  
10  
VRPD=5V  
C
t
VRPD=5V, f=1MHz  
* Peak wavelength n=1270nm,1290nm,1310nm,1330nm,1350nm,1370nm,1390nm,1410nm,1430nm,1450nm,1470nm,1490nm, 1510nm,1530nm,1550nm,  
1570nm,1590nm,1610nm  
* Precaution:  
1.Avoid eye or skin exposure to laser radiations.  
2.The device is sensitive to the electro-static damages (ESD). The device should be handled with ESD proof tools. To assemble the device on PCB, proper grounding  
is required to prevent ESD  
3.The performance and reliability of the device are not guaranteed when it is operated under environment with strong vibration .  
20550 Nordhoff St. • Chatsworth, CA 91311 • tel: 818.773.9044 • fax: 818.576.9486  
9F, No 81, Shui Lee Rd. • Hsinchu, Taiwan, R.O.C. • tel: 886.3.5169222 • fax: 886.3.5169213  
LUMINENTOIC.COM  
LUMNDS513-SEP2204  
rev. A.1  
1

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