Datasheet > BZX85C3V6

BZX85C3V6

更新时间： 2024-11-12 00:01:27

品牌	Logo	应用领域
威世 - VISHAY		二极管测试高压
页数	文件大小	规格书
6页	50K
描述
Silicon Epitaxial Planar Z-Diodes

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中文翻译

获取价格

数据手册

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BZX85C3V6 数据手册

BZX85C...

Vishay Telefunken

Silicon Epitaxial Planar Z–Diodes

Features

Sharp edge in reverse characteristics

Low reverse current

Low noise

Very high stability

Available with tighter tolerances

Applications

94 9369

Voltage stabilization

Absolute Maximum Ratings

T = 25 C

Parameter

Power dissipation

Test Conditions

l=4mm, T =25 C

Type

Symbol

Value

1.3

Unit

Junction temperature

Storage temperature range

stg

175

–65...+175

Maximum Thermal Resistance

T = 25 C

Parameter

Junction ambient

Test Conditions

Symbol

thJA

Value

110

Unit

K/W

l=4mm, T =constant

Electrical Characteristics

T = 25 C

Parameter

Test Conditions

Type

Symbol Min

Typ Max Unit

Forward voltage

I =200mA

www.vishay.de • FaxBack +1-408-970-5600

Document Number 85608

Rev. 3, 01-Apr-99

1 (5)

12 3 4 5 6

中文翻译

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