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BZX84C11ET1 PDF预览

BZX84C11ET1

更新时间: 2024-11-13 03:18:19
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 166K
描述
DIODE 11 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB, PLASTIC PACKAGE-3, Voltage Regulator Diode

BZX84C11ET1 数据手册

 浏览型号BZX84C11ET1的Datasheet PDF文件第2页浏览型号BZX84C11ET1的Datasheet PDF文件第3页浏览型号BZX84C11ET1的Datasheet PDF文件第4页浏览型号BZX84C11ET1的Datasheet PDF文件第5页浏览型号BZX84C11ET1的Datasheet PDF文件第6页 
BZX84CxxxET1 Series,  
SZBZX84CxxxET1G Series  
Zener Voltage Regulators  
225 mW SOT23 Surface Mount  
This series of Zener diodes is offered in the convenient, surface  
mount plastic SOT23 package. These devices are designed to provide  
voltage regulation with minimum space requirement. They are well  
suited for applications such as cellular phones, hand held portables,  
and high density PC boards.  
http://onsemi.com  
3
1
Cathode  
Anode  
Specification Features  
3
225 mW Rating on FR4 or FR5 Board  
Zener Breakdown Voltage Range 2.4 V to 75 V  
Package Designed for Optimal Automated Board Assembly  
Small Package Size for High Density Applications  
ESD Rating of Class 3 (>16 kV) per Human Body Model  
Peak Power 225 W (8 X 20 ms)  
AECQ101 Qualified and PPAP Capable  
SZ Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements  
1
2
SOT23  
CASE 318  
STYLE 8  
MARKING DIAGRAM  
xxx M G  
PbFree Packages are Available  
Mechanical Characteristics  
G
1
CASE: Void-free, transfer-molded, thermosetting plastic case  
FINISH: Corrosion resistant finish, easily solderable  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
POLARITY: Cathode indicated by polarity band  
FLAMMABILITY RATING: UL 94 V0  
xxx  
M
= Device Code  
= Date Code*  
= PbFree Package  
G
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
ORDERING INFORMATION  
MAXIMUM RATINGS  
Device  
Package  
Shipping  
Rating  
Symbol  
Max  
Unit  
BZX84CxxxET1  
SOT23  
3000 / Tape &  
Reel  
Peak Power Dissipation @ 20 ms (Note 1)  
P
pk  
225  
W
@ T 25°C  
L
BZX84CxxxET1G  
SOT23  
(PbFree)  
3000 / Tape &  
Reel  
Total Power Dissipation on FR5 Board,  
P
D
(Note 2) @ T = 25°C  
225  
1.8  
mW  
mW/°C  
A
SZBZX84CxxxET1G SOT23  
(PbFree)  
3000 / Tape &  
Reel  
Derated above 25°C  
Thermal Resistance, JunctiontoAmbient  
R
556  
°C/W  
q
JA  
BZX84CxxxET3  
SOT23 10,000 / Tape &  
Reel  
SOT23 10,000 / Tape &  
Total Power Dissipation on Alumina Sub-  
P
D
strate, (Note 3) @ T = 25°C  
300  
2.4  
mW  
mW/°C  
BZX84CxxxET3G  
A
Derated above 25°C  
(PbFree)  
SZBZX84CxxxET3G SOT23 10,000 / Tape &  
(PbFree) Reel  
Reel  
Thermal Resistance, JunctiontoAmbient  
R
417  
°C/W  
°C  
q
JA  
Junction and Storage Temperature Range  
T , T  
J
65 to  
+150  
stg  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Nonrepetitive current pulse per Figure 9.  
2. FR5 = 1.0 X 0.75 X 0.62 in.  
3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina.  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking  
column of the Electrical Characteristics table on page 3 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
November, 2011 Rev. 7  
BZX84C2V4ET1/D  
 

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