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BZX79C3V0 PDF预览

BZX79C3V0

更新时间: 2024-11-06 20:20:23
品牌 Logo 应用领域
安森美 - ONSEMI 测试二极管
页数 文件大小 规格书
6页 213K
描述
Zener Diode, 1000-BLKBG

BZX79C3V0 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:O-LALF-W2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50Factory Lead Time:1 week
风险等级:5.38Is Samacsys:N
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
最大动态阻抗:95 ΩJEDEC-95代码:DO-35
JESD-30 代码:O-LALF-W2JESD-609代码:e3
元件数量:1端子数量:2
最高工作温度:200 °C最低工作温度:-65 °C
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:0.5 W
认证状态:Not Qualified标称参考电压:3 V
子类别:Voltage Reference Diodes表面贴装:NO
技术:ZENER端子面层:Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIED最大电压容差:5%
工作测试电流:5 mABase Number Matches:1

BZX79C3V0 数据手册

 浏览型号BZX79C3V0的Datasheet PDF文件第2页浏览型号BZX79C3V0的Datasheet PDF文件第3页浏览型号BZX79C3V0的Datasheet PDF文件第4页浏览型号BZX79C3V0的Datasheet PDF文件第5页浏览型号BZX79C3V0的Datasheet PDF文件第6页 
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