Datasheet > BZX79B30

BZX79B30

更新时间： 2024-11-22 22:22:23

品牌	Logo	应用领域
威世 - VISHAY		二极管齐纳二极管局域网
页数	文件大小	规格书
7页	325K
描述
SILICON PLANAR ZENER DIODES

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中文翻译

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数据手册

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BZX79B30 数据手册

BZX79 SERIES

SILICON PLANAR ZENER DIODES

DO-35

FEATURES

The Zener voltages are graded according to the international

E 24 standard. Higher Zener voltages and 1% tolerance

available on request.

max.

.079 (2.0)

Diodes available in these tolerance series:

Cathode

Mark

±2% BZX79-B

±3% BZX79-F

±5% BZX79-C

max. .020 (0.52)

MECHANICAL DATA

Case: DO-35 Glass Case

Weight: approx. 0.13 g

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature 8unless otherwise specified

SYMBOL

VALUE

UNIT

Zener Current (see Table “Characteristics”)

Power Dissipation at T_amb= 25°C

Junction Temperature

P_tot

T_j

500⁽¹⁾

-65 to 200

-65 to + 200

250

°C

Storage Temperature Range

Continuous Forward Current

T_S

I_F

°C

Peak reverse power dissipation (non-repetitive) t_p=100ms,

square wave

P_ZSM

Watts

Characteristics at Tamb = 25°C

SYMBOL

MIN.

TYP.

MAX.

UNIT

Thermal Resistance

Junction to Ambient Air

R_thJA

–

0.3⁽¹⁾

0.9

°C/W

Forward Voltage

at I_F= 10 mA

V_F

–

Volts

NOTES:

(1) Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.

12/10/98

12 3 4 5 6 7

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